Výsledky vyhledávání - "Brennan M. Coffey"

Area selective atomic layer deposition of SnO2 as an etch resist in fluorine based processes

Autor: Xin Yang, Himamshu Nallan, Brennan M. Coffey, John G. Ekerdt

Publikováno v: Journal of Vacuum Science & Technology A. 41:032402

Here, we propose SnO2 as a reactive ion etching (RIE) mask in fluorine-based etching processes. Tin forms nonvolatile compounds with fluorine at the process temperatures enabling tin to function as an etch mask. We investigate atomic layer deposition

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::128fc7b4f37e23872240e80129f65f1d
https://doi.org/10.1116/6.0002429

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Vacuum Ultraviolet-Enhanced Oxidation—A Route to the Atomic Layer Etching of Palladium Metal

Autor: Brennan M. Coffey, Himamshu C. Nallan, Chon Hei Lam, John G. Ekerdt, James R. Engstrom

Publikováno v: Chemistry of Materials. 32:6035-6042

Low-temperature, plasma-free atomic layer etching (ALE) of Pd0 is explored. A vacuum ultraviolet (VUV) light source (115 < λ < 400 nm) is used in conjunction with a controlled O2 gas exposure to pr...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b422114af19c61406950d64723380c6c
https://doi.org/10.1021/acs.chemmater.0c01379

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Low temperature, area-selective atomic layer deposition of NiO and Ni

Autor: Himamshu C. Nallan, Xin Yang, Brennan M. Coffey, John G. Ekerdt

Publikováno v: Journal of Vacuum Science & Technology A. 40:062406

Nickel and nickel oxide are utilized within various device heterostructures for chemical sensing, solar cells, batteries, etc. Recently, the rising interest in realizing low-cost, flexible electronics to enable ubiquitous sensors and solar panels, ne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14d8cc8b2c093f4b1a1b511a3fef6edc
https://doi.org/10.1116/6.0002068

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Area-Selective Atomic Layer Deposition of Crystalline BaTiO3

Autor: Brennan M. Coffey, Edward L. Lin, John G. Ekerdt, Pei-Yu Chen

Publikováno v: Chemistry of Materials. 31:5558-5565

Patterned, crystalline BaTiO3 (BTO) films were formed directly on STO(001) surfaces using atomic layer deposition and restricting Ba and Ti precursor adsorption to STO(001) by passivating regions of the substrate with a polystyrene blocking layer. Pa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cdd7f1df8d473f0c79fb5cb6863ad799
https://doi.org/10.1021/acs.chemmater.9b01271

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A Vacuum Ultraviolet-Enhanced Oxidation Mechanism for Pd: Near-Surface Oxidation for Atomic Layer Etching

Autor: Brennan M. Coffey, Himamshu C. Nallan, James R. Engstrom, John G. Ekerdt

Publikováno v: ACS applied materialsinterfaces. 12(45)

Density functional theory (DFT) is used to better understand the oxidation of Pd metal using vacuum ultraviolet (VUV) light co-exposed with O2, which is known to produce O and O3. The oxidation of Pd metal arising from O, O2, and O3 is assessed on ba

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b146d368388ec3445e31845b3b96fff3
https://pubmed.ncbi.nlm.nih.gov/33119248

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Vacuum ultraviolet enhanced atomic layer etching of ruthenium films

Autor: Himamshu C. Nallan, Brennan M. Coffey, John G. Ekerdt

Publikováno v: Journal of Vacuum Science & Technology A. 39:012601

Vacuum ultraviolet (VUV) enhanced atomic layer etching (ALE) of thin (∼8 nm) Ru films is demonstrated. Oxidation half-cycles of 2–5 min VUV/O2 co-exposure are used to oxidize near-surface Ru to RuO2 at 1 Torr O2 and 100–150 °C. In situ x-ray p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85db91484416faddf81f19e3ab36ed68
https://doi.org/10.1116/6.0000742

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Epitaxial integration of ferroelectric and conductive perovskites on silicon

Autor: Davis J. Smith, Pei-Yu Chen, Agham Posadas, Brennan M. Coffey, Keji Lai, Lu Zheng, Alexander A. Demkov, HsinWei Wu, Edward L. Lin, John G. Ekerdt

Publikováno v: Journal of Vacuum Science & Technology A. 38:022403

BaTiO3 (BTO) and LaxSr1 − xTiO3 (x ≤ 0.15) perovskite heterostructures are deposited epitaxially on SrTiO3 (STO)-buffered Si(001) via atomic layer deposition (ALD) to explore the formation of a quantum metal layer between a ferroelectric film and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::697dd26d7852b857f5e568a9c5407f33
https://doi.org/10.1116/1.5134077

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Atomic layer deposition of cobalt oxide on oxide substrates and low temperature reduction to form ultrathin cobalt metal films

Autor: Zizhuo Zhang, Himamshu C. Nallan, Tanmoy Pramanik, Sanjay K. Banerjee, Brennan M. Coffey, Thong Q. Ngo, John G. Ekerdt

Publikováno v: Journal of Vacuum Science & Technology A. 37:010903

The authors report the deposition of 4.5-nm-thick cobalt (II) oxide on SiO2/Si(001) and MgO(001) substrates at 180–270 °C by atomic layer deposition using bis(N-tert-butyl-N′-ethylpropionamidinato) cobalt (II) and water as coreactants. The resul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f2875bebd660a9945f05131c5983ca3
https://doi.org/10.1116/1.5063669

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Colloidal transfer printing

Autor: Michael J. Skaug, Daniel K. Schwartz, Brennan M. Coffey

Publikováno v: ACS applied materialsinterfaces. 5(24)

Many fields of research have adopted self-assembly of colloidal spheres as an easy and reliable method to produce macroscopic structures with nanoscale periodicity. The field of soft lithography in particular has used colloidal self-assembly to fabri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58851618b556d22799b788d8a0b1a562
https://pubmed.ncbi.nlm.nih.gov/24274697

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