Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Brennan M. Coffey"'
Publikováno v:
Journal of Vacuum Science & Technology A. 41:032402
Here, we propose SnO2 as a reactive ion etching (RIE) mask in fluorine-based etching processes. Tin forms nonvolatile compounds with fluorine at the process temperatures enabling tin to function as an etch mask. We investigate atomic layer deposition
Publikováno v:
Chemistry of Materials. 32:6035-6042
Low-temperature, plasma-free atomic layer etching (ALE) of Pd0 is explored. A vacuum ultraviolet (VUV) light source (115 < λ < 400 nm) is used in conjunction with a controlled O2 gas exposure to pr...
Publikováno v:
Journal of Vacuum Science & Technology A. 40:062406
Nickel and nickel oxide are utilized within various device heterostructures for chemical sensing, solar cells, batteries, etc. Recently, the rising interest in realizing low-cost, flexible electronics to enable ubiquitous sensors and solar panels, ne
Publikováno v:
Chemistry of Materials. 31:5558-5565
Patterned, crystalline BaTiO3 (BTO) films were formed directly on STO(001) surfaces using atomic layer deposition and restricting Ba and Ti precursor adsorption to STO(001) by passivating regions of the substrate with a polystyrene blocking layer. Pa
Publikováno v:
ACS applied materialsinterfaces. 12(45)
Density functional theory (DFT) is used to better understand the oxidation of Pd metal using vacuum ultraviolet (VUV) light co-exposed with O2, which is known to produce O and O3. The oxidation of Pd metal arising from O, O2, and O3 is assessed on ba
Publikováno v:
Journal of Vacuum Science & Technology A. 39:012601
Vacuum ultraviolet (VUV) enhanced atomic layer etching (ALE) of thin (∼8 nm) Ru films is demonstrated. Oxidation half-cycles of 2–5 min VUV/O2 co-exposure are used to oxidize near-surface Ru to RuO2 at 1 Torr O2 and 100–150 °C. In situ x-ray p
Autor:
Davis J. Smith, Pei-Yu Chen, Agham Posadas, Brennan M. Coffey, Keji Lai, Lu Zheng, Alexander A. Demkov, HsinWei Wu, Edward L. Lin, John G. Ekerdt
Publikováno v:
Journal of Vacuum Science & Technology A. 38:022403
BaTiO3 (BTO) and LaxSr1 − xTiO3 (x ≤ 0.15) perovskite heterostructures are deposited epitaxially on SrTiO3 (STO)-buffered Si(001) via atomic layer deposition (ALD) to explore the formation of a quantum metal layer between a ferroelectric film and
Autor:
Zizhuo Zhang, Himamshu C. Nallan, Tanmoy Pramanik, Sanjay K. Banerjee, Brennan M. Coffey, Thong Q. Ngo, John G. Ekerdt
Publikováno v:
Journal of Vacuum Science & Technology A. 37:010903
The authors report the deposition of 4.5-nm-thick cobalt (II) oxide on SiO2/Si(001) and MgO(001) substrates at 180–270 °C by atomic layer deposition using bis(N-tert-butyl-N′-ethylpropionamidinato) cobalt (II) and water as coreactants. The resul
Publikováno v:
ACS applied materialsinterfaces. 5(24)
Many fields of research have adopted self-assembly of colloidal spheres as an easy and reliable method to produce macroscopic structures with nanoscale periodicity. The field of soft lithography in particular has used colloidal self-assembly to fabri
Publikováno v:
ChemInform. 35
The influence of Bi- or Ba-containing compounds on the rechargeability of γ-MnO 2 in alkaline electrolytes has been investigated with AA cells containing cylindrical cathodes and flooded cells containing thin-film type cathodes. In addition to the e