Zobrazeno 1 - 10
of 116
pro vyhledávání: '"Brenes, Roberto"'
Autor:
Rudelis, Alyssa, Hu, Beili, Sinclair, Josiah, Bytyqi, Edita, Schwartzman, Alan, Brenes, Roberto, Zhitomirsky, Tamar Kadosh, Schleier-Smith, Monika, Vuletić, Vladan
In order for optical cavities to enable strong light-matter interactions for quantum metrology, networking, and scalability in quantum computing systems, their mirrors must have minimal losses. However, high-finesse dielectric cavity mirrors can degr
Externí odkaz:
http://arxiv.org/abs/2309.00173
Autor:
Brenes, Roberto, deQuilettes, Dane W., Swartwout, Richard, Alsalloum, Abdullah Y., Bakr, Osman M., Bulović, Vladimir
Understanding energy transport in semiconductors is critical for design of electronic and optoelectronic devices. Semiconductor material properties such as charge carrier mobility or diffusion length are commonly measured in bulk crystals and determi
Externí odkaz:
http://arxiv.org/abs/2209.08684
Autor:
deQuilettes, Dane W., Yoo, Jason Jungwan, Brenes, Roberto, Kosasih, Felix Utama, Laitz, Madeleine, Dou, Benjia Dak, Graham, Daniel J., Ho, Kevin, Shin, Seong Sik, Ducati, Caterina, Bawendi, Moungi, Bulović, Vladimir
The ability to reduce energy loss at semiconductor surfaces through passivation or surface field engineering has become an essential step in the manufacturing of efficient photovoltaic (PV) and optoelectronic devices. Similarly, surface modification
Externí odkaz:
http://arxiv.org/abs/2204.07642
Autor:
Dou, Benjia Dak, deQuilettes, Dane W., Laitz, Madeleine, Brenes, Roberto, Wang, Lili, Wassweiler, Ella L, Swartwout, Richard, Yoo, Jason J., Sponseller, Melany, Hartono, Noor Titan Putri, Sun, Shijing, Buonassisi, Tonio, Bawendi, Moungi G, Bulovic, Vladimir
State-of-the-art metal halide perovskite-based photovoltaics often employ organic ammonium salts, AX, as a surface passivator, where A is a large organic cation and X is a halide. These surface treatments passivate the perovskite by forming layered p
Externí odkaz:
http://arxiv.org/abs/2203.05904
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Co
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Co
Externí odkaz:
https://hdl.handle.net/1721.1/121662
Autor:
deQuilettes, Dane W., Brenes, Roberto, Laitz, Madeleine, Motes, Brandon T., Glazov, Mikhail M., Bulovic, Vladimir
Energy carrier transport and recombination in emerging semiconductors can be directly monitored with optical microscopy, leading to the measurement of the diffusion coefficient (D), a critical property for design of efficient optoelectronic devices.
Externí odkaz:
http://arxiv.org/abs/2003.11665
Publikováno v:
Phys. Rev. Applied 12, 014017 (2019)
Photon recycling is required for a solar cell to achieve an open-circuit voltage ($V_{OC}$) and power conversion efficiency (PCE) approaching the Shockley-Queisser theoretical limit. In metal halide perovskite solar cells, the achievable performance
Externí odkaz:
http://arxiv.org/abs/1901.08637
Autor:
Jones, Timothy W., Osherov, Anna, Alsari, Mejd, Sponseller, Melany, Duck, Benjamin C., Jung, Young-Kwang, Settens, Charles, Niroui, Farnaz, Brenes, Roberto, Stan, Camelia V., Li, Yao, Abdi-Jalebi, Mojtaba, Tamura, Nobumichi, Macdonald, J. Emyr, Burghammer, Manfred, Friend, Richard H., Bulović, Vladimir, Walsh, Aron, Wilson, Gregory J., Lilliu, Samuele, Stranks, Samuel D.
Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in
Externí odkaz:
http://arxiv.org/abs/1803.01192
Akademický článek
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Autor:
Colón-Gaud, Checo, Whiles, Matt R., Lips, Karen R., Pringle, Catherine M., Kilham, Susan S., Connelly, Scott, Brenes, Roberto, Peterson, Scot D.
Publikováno v:
Journal of the North American Benthological Society, 2010 Dec 01. 29(4), 1185-1198.
Externí odkaz:
https://www.jstor.org/stable/10.1899/09-102.1