Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Brendan Ubochi"'
Publikováno v:
Journal of Electrical and Computer Engineering, Vol 2024 (2024)
Glaucoma is a leading cause of blindness worldwide and results from high eye pressure-induced damage to the optic nerves, thereby preventing visual information from reaching the brain. While glaucoma is incurable in its advanced stages, its early det
Externí odkaz:
https://doaj.org/article/96c517c932b24d349ee9c3541c7d4de6
Autor:
Khaled Ahmeda, Brendan Ubochi, Brahim Benbakhti, Steven J. Duffy, Ali Soltani, Wei Dong Zhang, Karol Kalna
Publikováno v:
IEEE Access, Vol 5, Pp 20946-20952 (2017)
The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN transmission line model (TLM) heterostructures with a scaled source-to-drain distance. This paper is based on meticulously calibrated TCAD simulations against
Externí odkaz:
https://doaj.org/article/8719bd4890404b268201449d774a803d
Autor:
Johnson Okoli, Brendan Ubochi
Publikováno v:
International Journal of Computing and Digital Systems. 11:811-820
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbcd94ada30ed5f4218932a554abb6db
https://doi.org/10.12785/ijcds/110166
https://doi.org/10.12785/ijcds/110166
Autor:
John Macaulay, Brendan Ubochi
Publikováno v:
FUTA JOURNAL OF ENGINEERING AND ENGINEERING TECHNOLOGY. 15:75-83
This paper presents the use of the dSPACE rapid control prototype (RCP) control system to implement a feedback control system for a conventional Boost DC-DC converter hardware to validate the converter's operation and performance during the research
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e9e079eb60ec305c7c5aab8076ea3f
https://doi.org/10.51459/futajeet.2021.15.1.311
https://doi.org/10.51459/futajeet.2021.15.1.311
Publikováno v:
IET Power Electronics. 12:2731-2740
The reliability of silicon carbide metal oxide semiconductor field-effect transistors remains a challenge in power applications and relates to the SiO2–SiC interface. The presence of unwanted interface traps/defects degrades the device performance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4b8123d2881d1bdeb3d7a68a131523a
https://doi.org/10.1049/iet-pel.2018.5897
https://doi.org/10.1049/iet-pel.2018.5897
A study of the impact of dimension and temperature on a state of the art 4H-SiC power vertical DMOSFET has been carried out using drift-diffusion calculations in conjunction with electrical characterizations to extract physical parameters and doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d71df8027779a780dc3b3b3e5028354
https://cronfa.swan.ac.uk/Record/cronfa55865/Download/55865__18863__27a583feda014fec8ed37c60ff230244.pdf
https://cronfa.swan.ac.uk/Record/cronfa55865/Download/55865__18863__27a583feda014fec8ed37c60ff230244.pdf
Publikováno v:
2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS).
A potential link between traps located in the buffer and the AC/DC dispersion commonly observed in GaN HEMTs is studied by simulating the device in class A amplifier operations. We have revealed that acceptor traps located in the buffer at energy lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aabf7b531e39b85afdc051ec1673cd3
https://doi.org/10.1109/comcas.2017.8244823
https://doi.org/10.1109/comcas.2017.8244823