Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Brendan T. Marozas"'
Autor:
Weerasinghe Priyantha, Keith Jamison, Leif Fredin, Trevor A. O'Loughlin, D. E. Sidor, Burt Fowler, G. R. Savich, Gary W. Wicks, Terry Golding, Brendan T. Marozas
Publikováno v:
Frontiers in Optics 2016.
Resonant cavity detectors based on III–V materials have been designed, grown entirely by molecular beam epitaxy, fabricated, and tested. They offer a low noise (dark current densities of 0.4 mA/cm2 were measured at 298 K, close to the predicted val
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28b150c9881533c5d80b4c666873180f
https://doi.org/10.1364/fio.2016.jw4a.142
https://doi.org/10.1364/fio.2016.jw4a.142
Publikováno v:
Journal of Applied Physics. 123:214504
Surface currents in mid-wave infrared photodetectors often limit the device performance. Dark current mechanisms in the bulk of a semiconductor are well understood; however, there is a poorer understanding of the mechanisms of surface currents. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d30fc196674678355f8713883fd1f891
https://doi.org/10.1063/1.5027637
https://doi.org/10.1063/1.5027637
Publikováno v:
Optical Materials Express. 8:1419
Surface dark current often limits the performance of infrared photodetectors, especially as detectors become smaller. Bulk dark current mechanisms are well understood, but surface dark current mechanisms are not. Here, surface dark current mechanisms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c6877a29bb4262db11f4f3de25c5eb7
https://doi.org/10.1364/ome.8.001419
https://doi.org/10.1364/ome.8.001419
Autor:
Trevor A. O'Loughlin, Vincent M. Cowan, Christian P. Morath, Brendan T. Marozas, William D. Hughes, X. Du, Geoffrey D. Jenkins, Gary W. Wicks, G. R. Savich, D. E. Sidor
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:02B117
This manuscript describes an investigation of the effects of growth temperature on InAs epitaxial layers and InAs-based nBn detectors grown by molecular beam epitaxy (MBE). The motivation for this work is to improve the overall performance of InAs-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88ad93b9166994f5c78f4f6d484f8c0d
https://doi.org/10.1116/1.4978389
https://doi.org/10.1116/1.4978389
Autor:
James B. Oliver, A. Shvydky, Brendan T. Marozas, Semyon Papernov, A. A. Kozlov, Terrance J. Kessler
Publikováno v:
Optical Engineering. 53:122504
Hafnium oxide (HfO2) is the most frequently used high-index material in multilayer thin-film coatings for high-power laser applications ranging from near-infrared to near-ultraviolet (UV). Absorption in this high-index material is also known to be re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f54bd97313df4b6dda0374258582cb2
https://doi.org/10.1117/1.oe.53.12.122504
https://doi.org/10.1117/1.oe.53.12.122504