Zobrazeno 1 - 10
of 103
pro vyhledávání: '"Brendan Foran"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract Spontaneous polarization and crystallographic orientations within ferroelectric domains are investigated using an epitaxially grown BiFeO3 thin film under bi-axial tensile strain. Four dimensional-scanning transmission electron microscopy (4
Externí odkaz:
https://doaj.org/article/a0b738a54c0f41049889982bd0ff698c
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 5, Pp 1-11 (2019)
Vertical Cavity Surface Emitting Lasers are characterized under a high magnification optical microscope for reliability during accelerated aging using Optical Beam Induced Current and Electroluminescence imaging and spectroscopy, and also with electr
Externí odkaz:
https://doaj.org/article/b82b455f585948949c7f61bd878d7d06
Publikováno v:
APL Materials, Vol 1, Iss 6, Pp 062103-062103-6 (2013)
Pulsed laser deposition and chemical vapor deposition were used to deposit very thin silicon on multilayer graphene (MLG) on a nickel foam substrate for application as an anode material for lithium ion batteries. The as-grown material was directly fa
Externí odkaz:
https://doaj.org/article/abfeb41b88d7414c9965cf88e42eb1b4
Autor:
Nicholas Antoniou, Brendan Foran
Publikováno v:
EDFA Technical Articles. 25:44-46
This column is part of a series of reports on the findings to date of the EDFAS Failure Analysis Roadmap Councils. The Failure Analysis Future Roadmap Council (FAFRC) is concerned with identifying the longer term needs of the FA community. This artic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c506b636b62f573f604e31268e02792d
https://doi.org/10.31399/asm.edfa.2023-2.p044
https://doi.org/10.31399/asm.edfa.2023-2.p044
Autor:
Helen Slater, Damian Wrigley, Peter Dixon, Gary Howling, Chris Armitage, Bruce D. Clarkson, Patrick O'Connor, James A. Fitzsimons, Heather Campbell, Keith Bradby, Dermot O'Gorman, Ian M. McLeod, Andrew Cox, Tony D. Auld, Shane Norrish, Brendan Foran
Publikováno v:
Ecological Management & Restoration. 22:220-222
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6f419deff4eb71110129766938219c6
https://doi.org/10.1111/emr.12510
https://doi.org/10.1111/emr.12510
Autor:
Gregory T. Forcherio, Adam Bushmaker, Yu Wang, Younghee Kim, David R. Baker, Stephen K. Doorn, Sisi Yang, Stephen B. Cronin, Bo Wang, Brendan Foran, Han Htoon
Publikováno v:
ACS Omega, Vol 5, Iss 32, Pp 20543-20547 (2020)
ACS Omega
ACS Omega
A robust and reliable method for enhancing the photoluminescence (PL) of multilayer MoS2 is demonstrated using an oxygen plasma treatment process followed by laser exposure. Here, the plasma and laser treatments result in an indirect-to-direct band g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37eec22c451aa797a0851559345878ae
https://doaj.org/article/a465eaab25d94082a2a4721c04cc9f2d
https://doaj.org/article/a465eaab25d94082a2a4721c04cc9f2d
Publikováno v:
Journal of the American Ceramic Society. 103:3217-3230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373b378911696377ba204cdc59b45394
https://doi.org/10.1111/jace.17014
https://doi.org/10.1111/jace.17014
Autor:
Adam Bushmaker, Stephen B. Cronin, Mark Peterson, Colin J. Mann, Sisi Yang, Jihan Chen, Bo Wang, Brendan Foran
Publikováno v:
IEEE Transactions on Nuclear Science. 66:413-419
We report on photoluminescence (PL) spectroscopy and transmission electron microscope imaging of suspended and substrate-supported flakes of the 2-D semiconductor MoS2 before and after exposure to 100-keV proton radiation with fluences of $6 \times 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6468bae137ec4257db8d8449fb3ce44
https://doi.org/10.1109/tns.2018.2886180
https://doi.org/10.1109/tns.2018.2886180
Publikováno v:
IRPS
Electron beam-induced current (EBIC) data, acquired in a scanning transmission electron microscope (STEM), are presented in the context of microelectronic device reliability. The mechanisms causing, and applications of, three distinct EBIC modes are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b23e431285613f5c77f2779c6e454dfd
https://doi.org/10.1109/irps45951.2020.9129618
https://doi.org/10.1109/irps45951.2020.9129618
Publikováno v:
Microscopy and Microanalysis. 26:374-375
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e334ad45c6da7e3ba27c11e1252306f
https://doi.org/10.1017/s1431927620014427
https://doi.org/10.1017/s1431927620014427