Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Brendan, Sheehan"'
Publikováno v:
BMC Musculoskeletal Disorders, Vol 23, Iss 1, Pp 1-14 (2022)
Abstract Background The Osteoarthritis Research Society International (OARSI) updated their guideline for clinical trials on knee osteoarthritis (KOA) in 2015, which contains recommendations for the conduct, design, and reporting of clinical trials.
Externí odkaz:
https://doaj.org/article/6d1d850a139046f6a9ccc2263a14d1f1
Autor:
Enrico Di Russo, Alessandro Tonon, Arianna Mischianti, Francesco Sgarbossa, Emma Coleman, Farzan Gity, Luca Panarella, Brendan Sheehan, Vasily A. Lebedev, Davide De Salvador, Ray Duffy, Enrico Napolitani
Publikováno v:
ACS Applied Electronic Materials. 5:2862-2875
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0106d6d4b941fc3be26a6b1065f3b248
https://doi.org/10.1021/acsaelm.3c00362
https://doi.org/10.1021/acsaelm.3c00362
Autor:
Gustavo Constantino de Campos, Raman Mundi, Craig Whittington, Marie-Josée Toutounji, Wilson Ngai, Brendan Sheehan
Publikováno v:
Therapeutic Advances in Musculoskeletal Disease, Vol 12 (2020)
Aims: The objective of this review was to examine the relationship between osteoarthritis (OA) and mobility-related comorbidities, specifically diabetes mellitus (DM) and cardiovascular disease (CVD). It also investigated the relationship between OA
Externí odkaz:
https://doaj.org/article/6243c60588394559b99b14e20854ec1f
Autor:
Anya Curran, Farzan Gity, Agnieszka Gocalinska, Enrica Mura, Roger E. Nagle, Michael Schmidt, Brendan Sheehan, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley
Publikováno v:
Crystals, Vol 11, Iss 11, p 1348 (2021)
In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating Ga
Externí odkaz:
https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050
Autor:
Anya Curran, Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica Mura, Kevin Thomas, Roger E. Nagle, Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley, Farzan Gity
Publikováno v:
Crystals, Vol 11, Iss 2, p 160 (2021)
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the fi
Externí odkaz:
https://doaj.org/article/b4687f6106c14ab2a814c4d1d2f9e4d7
Autor:
Brendan Sheehan
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5cfd8efe39bc68b4a425aaef6a21d46
https://doi.org/10.2139/ssrn.4382137
https://doi.org/10.2139/ssrn.4382137
Autor:
Karim Cherkaoui, Alan Blake, Yuri Y. Gomeniuk, Jun Lin, Brendan Sheehan, Mary White, Paul K. Hurley, Peter J. Ward
Publikováno v:
AIP Advances, Vol 8, Iss 8, Pp 085323-085323-8 (2018)
This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including
Externí odkaz:
https://doaj.org/article/aefaabe2923f425484c238a21be54a2e
Publikováno v:
Clinical Journal of Sport Medicine. 32:480-485
The purpose of this study was to determine the inter-rater and intra-rater reliability of the symmetry, classification, and underlying pathoanatomy associated with the J-sign in patients with recurrent lateral patellofemoral instability.Blinded, inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31a65942c1ad7f775b513ea2433ce4d2
https://doi.org/10.1097/jsm.0000000000000997
https://doi.org/10.1097/jsm.0000000000000997
Autor:
Alessandro Tonon, Enrico Di Russo, Francesco Sgarbossa, Luca Bacci, Nicola Argiolas, Carlo Scian, Yurii P. Ivanov, Giorgio Divitini, Brendan Sheehan, Davide De Salvador, Andrea Gasparotto, Vittorio Morandi, Ray Duffy, Enrico Napolitani
Publikováno v:
Materials Science in Semiconductor Processing. 164:107616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b5e93e3c74ba65fda1a4dce5899fa5e
https://doi.org/10.1016/j.mssp.2023.107616
https://doi.org/10.1016/j.mssp.2023.107616