Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Brenda L. VanMil"'
Autor:
Hongen Shen, Anand V. Sampath, Joe C. Campbell, Ryan Enck, Brenda L. VanMil, Yoajia Chen, Gregory A. Garrett, Michael Wraback, Roy B. Chung, Qiugui Zhou, Meredith Reed
Publikováno v:
Materials Science Forum. 858:1206-1209
We report on improvement in the deep ultraviolet (DUV) photoresponse of SiC based detectors through the development of n- AlxGa1-xN / i-p SiC heterojunction photodiodes. Fabricated photodiodes have high external quantum efficiency (EQE), greater than
Autor:
Anand V. Sampath, Andrew H. Jones, Joe C. Campbell, Brenda L. VanMil, Yang Shen, Kimberley A. Olver, Yuan Yuan, Elizabeth J. Opila, Yiwei Peng, Jiyuan Zheng, Cory G. Parker
Publikováno v:
Applied Physics Letters. 115:261101
Silicon carbide Schottky diodes with thick i-regions are reported. Compared with previously reported p-i-n photodiodes, a shift of the absorption peak from 270 nm to 350 nm was observed. The responsivity curves of the Schottky diode are modeled and c
Publikováno v:
Journal of Electronic Materials. 43:3056-3059
We have used infrared spectroscopic ellipsometry to interrogate the dielectric response of a series of Hg1−xCdxSe samples in a spectral range between 2000 and 40000 nm. Using a standard inversion technique, the experimental data obtained at multipl
Autor:
Brenda L. VanMil, Jun Hu, R. L. Myers-Ward, Xiaobin Xin, Jian Hui Zhao, D. K. Gaskill, Charles R. Eddy
Publikováno v:
IEEE Transactions on Nuclear Science. 58:3343-3347
The effects of proton irradiation on ultraviolet 4H-SiC single photon avalanche photodiodes (SPADs) are investigated for the first time. The SPADs, grown by chemical vapor deposition, were designed for operation in the ultraviolet having dark count r
Autor:
Charles R. Eddy, Mario G. Ancona, D. K. Gaskill, R. L. Myers-Ward, Brenda L. VanMil, Karl D. Hobart, Kok Keong Lew, Fritz J. Kub, Eugene A. Imhoff
Publikováno v:
IEEE Transactions on Electron Devices. 58:3395-3400
A novel taper-doping anode termination method is introduced for high-voltage silicon carbide devices. The method employs a subresolution two-tone termination mask to achieve a gray-scale exposure and a smoothly tapered photoresist profile. Using the
Autor:
Brenda L. VanMil, Suk Jae Chung, Virginia D. Wheeler, D. Kurt Gaskill, Yoosuf N. Picard, Robert E. Stahlbush, Marek Skowronski, Charles R. Eddy, Rachael L. Myers-Ward, Nadeemullah A. Mahadik
Publikováno v:
Materials Science Forum. :63-66
The effectiveness of an in-situ growth interrupt in nitrogen doped 8° off-cut epilayers was investigated using ultraviolet photoluminescence imaging. Low-doped n-type epilayers (
Autor:
Brenda L. VanMil, D. Kurt Gaskill, Charles R. Eddy, Jun Hu, Xiaobin Xin, Rachael L. Myers-Ward, Jian Hui Zhao
Publikováno v:
Materials Science Forum. :551-554
The effects of proton irradiation on uv 4H-SiC single photon avalanche photodiodes (SPADs) are reported. The SPADs, grown by chemical vapor deposition, were designed for uv operation with dark count rates (DCR) of about 30 kHz and single photon detec
Autor:
Brenda L. VanMil, B. C. Connelly, Yuhang Ren, W. A. Beck, Zehra Cevher, H. S. Hier, Patrick Folkes
Publikováno v:
Journal of Applied Physics. 123:161512
We used Raman scattering and time-resolved photoluminescence spectroscopy to investigate the molecular-beam-epitaxy (MBE) growth parameters that optimize the structural defects and therefore the internal radiative quantum efficiency of MBE-grown GaAs
Autor:
Brenda L. VanMil, Charles R. Eddy, Rachael L. Myers-Ward, Robert E. Stahlbush, D. Kurt Gaskill
Publikováno v:
Materials Science Forum. :271-276
The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. The glide of BPDs during epitaxial growth has been observed and the role of this glide in forming half-loop a