Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Brenda A. Everitt"'
Autor:
Nurul Amin, James M. Daughton, A.V. Pohm, Brenda A. Everitt, Taras G. Pokhil, L. Zhong, Edward S. Murdock, T. van Nguyen, D. Olson, P. Kolbo
Publikováno v:
IEEE Transactions on Magnetics. 41:125-131
We have designed and fabricated a vertical giant magnetoresistive (VGMR) head for high-density magnetic recording. In this style of recording head, read current flows through the sensor length, which is oriented perpendicular to the air-bearing surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c4bf381a56d81426280b1cd071abdb
https://doi.org/10.1109/tmag.2004.840368
https://doi.org/10.1109/tmag.2004.840368
Autor:
Sining Mao, Brenda A. Everitt, Jack H. Judy, Edward S. Murdock, Zhenghong Qian, John M. Sivertsen
Publikováno v:
Journal of Applied Physics. 85:6106-6108
Exchange coupling of radio frequency sputtered NiMn/NiFe (NiMn on top) and NiFe/NiMn (NiMn at bottom) bilayers have been investigated. It was found that the exchange coupling field, Hex, is not only directly related with the annealing temperature and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0849b93cbe08dee7a4ebea3c6a3e54f
https://doi.org/10.1063/1.370276
https://doi.org/10.1063/1.370276
Publikováno v:
IEEE Transactions on Magnetics. 34:1060-1062
Pseudo spin valve cells with critical dimension 0.15 /spl mu/m were fabricated using e-beam lithography and exercised with an externally applied magnetic field. Data indicate that bit end shaping is important for cell stability. At such small critica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e2eb2be7fd8983604ff6e58b622d694
https://doi.org/10.1109/20.706356
https://doi.org/10.1109/20.706356
Publikováno v:
Journal of Applied Physics. 81:4020-4022
For magnetoresistive random access memory (MRAM) to be a successful new memory technology, very dense cells with high output are necessary. As bit sizes shrink, it becomes advantageous to employ memory modes in which the uniaxial anisotropy lies alon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b80c986700c2d32062391a5a8303f46
https://doi.org/10.1063/1.364923
https://doi.org/10.1063/1.364923
Publikováno v:
IEEE Transactions on Magnetics. 33:3280-3282
It is shown experimentally for 0.4 micron wide "pseudo spin valve" memory cells that a bias field across an element significantly increases or decreases the switching threshold of the thicker films which store the data depending on whether the bias a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f1bd866215381d23bb65dac235f4246
https://doi.org/10.1109/20.617917
https://doi.org/10.1109/20.617917
Autor:
A.V. Pohm, James M. Daughton, R.S. Beech, Kevin J. Nordquist, Theodore Zhu, Eugene Youjun Chen, Brenda A. Everitt, Mark A. Durlam, Saied N. Tehrani
Publikováno v:
IEEE Transactions on Magnetics. 32:4645-4647
Memory elements 0.2 microns wide made from multilayer GMR material have been studied experimentally and analytically. When etched into narrow elements, the 12 to 15% material exhibits a memory mode with large outputs of /spl plusmn/8%. Analysis shows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e89bb663fa87cf4657366099dd68b8ab
https://doi.org/10.1109/20.539105
https://doi.org/10.1109/20.539105
Publikováno v:
Proceedings of Nonvolatile Memory Technology Conference.
Sub-micron memory elements made from sandwich and multilayer GMR material have been studied experimentally and analytically. The studies show that these elements are capable of fast read and write, do not exhibit wear out, have high densities for a g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52e4092507eae34c6db9e932db438b9
https://doi.org/10.1109/nvmt.1996.534681
https://doi.org/10.1109/nvmt.1996.534681