Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Brehm, Moritz"'
Autor:
Wilflingseder, Christoph, Aberl, Johannes, Navarette, Enrique Prado, Hesser, Günter, Groiss, Heiko, Liedke, Maciej O., Butterling, Maik, Wagner, Andreas, Hirschmann, Eric, Corley-Wiciak, Cedric, Zoellner, Marvin H., Capellini, Giovanni, Fromherz, Thomas, Brehm, Moritz
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epit
Externí odkaz:
http://arxiv.org/abs/2410.03295
Autor:
Salomon, Andreas, Aberl, Johannes, Vukušić, Lada, Prado-Navarrete, Enrique, Marböck, Jacqueline, Enriquez, Diego-Haya, Schuster, Jeffrey, Martinez, Kari, Groiss, Heiko, Fromherz, Thomas, Brehm, Moritz
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect semiconductor, is a poo
Externí odkaz:
http://arxiv.org/abs/2409.11081
Autor:
Salomon, Andreas, Aberl, Johannes, Navarrete, Enrique Prado, Karaman, Merve, Gali, Ádám, Fromherz, Thomas, Brehm, Moritz
Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based quantum repeaters. We have recently developed a non-invasive method to
Externí odkaz:
http://arxiv.org/abs/2408.13660
Autor:
Aberl, Johannes, Navarrete, Enrique Prado, Karaman, Merve, Enriquez, Diego Haya, Wilflingseder, Christoph, Salomon, Andreas, Primetzhofer, Daniel, Schubert, Markus Andreas, Capellini, Giovanni, Fromherz, Thomas, Deák, Peter, Udvarhelyi, Péter, Song, Li, Gali, Ádám, Brehm, Moritz
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position
Externí odkaz:
http://arxiv.org/abs/2402.19227
Autor:
Savaresi, Matteo, Martínez-Suárez, Abel, Tedeschi, Davide, Ronco, Giuseppe, Hierro-Rodríguez, Aurelio, McVitie, Stephen, Stroj, Sandra, Aberl, Johannes, Brehm, Moritz, García-Suárez, Victor M., Rota, Michele B., Alonso-González, Pablo, Martín-Sánchez, Javier, Trotta, Rinaldo
The discovery of quantum emitters in two-dimensional materials has triggered a surge of research to assess their suitability for quantum photonics. While their microscopic origin is still the subject of intense studies, ordered arrays of quantum emit
Externí odkaz:
http://arxiv.org/abs/2301.10273
Autor:
Poempool, Thanavorn, Aberl, Johannes, Clementi, Marco, Spindlberger, Lukas, Vukušić, Lada, Galli, Matteo, Gerace, Dario, Fournel, Frank, Hartmann, Jean-Michel, Schäffler, Friedrich, Brehm, Moritz, Fromherz, Thomas
We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable metho
Externí odkaz:
http://arxiv.org/abs/2204.09470
Autor:
Schuster, Jeffrey, Aberl, Johannes, Vukušić, Lada, Spindlberger, Lukas, Groiss, Heiko, Fromherz, Thomas, Brehm, Moritz, Schäffler, Friedrich
Publikováno v:
Scientific Reports volume 11, Article number: 20597 (2021)
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achie
Externí odkaz:
http://arxiv.org/abs/2110.15119
Autor:
Brehm, Moritz
Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics. However, the la
Externí odkaz:
http://arxiv.org/abs/2101.07580
Autor:
Groiss, Heiko, Glaser, Martin, Schatzl, Magdalena, Brehm, Moritz, Gerthsen, Dagmar, Roth, Dietmar, Bauer, Peter, Schäffler, Friedrich
Publikováno v:
Sci Rep 7, 16114 (2017)
We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either case we obs
Externí odkaz:
http://arxiv.org/abs/1705.05156
Autor:
Schatzl, Magdalena, Hackl, Florian, Glaser, Martin, Brehm, Moritz, Rauter, Patrick, Simbula, Angelica, Galli, Matteo, Fromherz, Thomas, Schäffler, Friedrich
We report on mapping of the local density of states in L3 photonic crystal resonators (PCR) via deterministically positioned single Ge quantum dots (QDs). Perfect site-control of Ge QDs on pre-patterned silicon-on-insulator substrates was exploited t
Externí odkaz:
http://arxiv.org/abs/1607.06701