Výsledky vyhledávání - "Brecht Truijen"

Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

Autor: Dimitri Linten, Philippe Roussel, Z. Wu, Ben Kaczer, Brecht Truijen, Jacopo Franco, Guido Groeseneken

Publikováno v: IEEE Transactions on Electron Devices. 68:3246-3253

A comprehensive investigation on the hot-carrier-induced interface state generation and its impact on carrier mobility in nMOSFET is performed. ${I}$ – ${V}$ compact modeling and charge pumping (CP) characterization are used as independent ways to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8e09f6b7fb00bda277e679defb2763ec
https://doi.org/10.1109/ted.2021.3080657

Zobrazit plný text záznamu

Dielectric response in ferroelectrics near polarization switching : analytical calculations, first-principles modeling, and experimental verification

Autor: Sergiu Clima, Anne S. Verhulst, Pratik Bagul, Brecht Truijen, Sean R. C. McMitchell, Ingrid De Wolf, Geoffrey Pourtois, Jan Van Houdt

Publikováno v: IEEE transactions on electron devices

Ferroelectrics (FEs) are increasingly used in nonvolatile memory applications. However, the impact of the electric dipole switching on its material parameters, in particular on the dielectric response, is not fully understood. In this work, an analyt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e194e0e0010165f8e5c058f14eeefdcb

Zobrazit plný text záznamu

A BSIM-Based Predictive Hot-Carrier Aging Compact Model

Autor: Erik Bury, Y. Xiang, Jacopo Franco, Michiel Vandemaele, Stanislav Tyaginov, Bertrand Parvais, Ben Kaczer, Z. Wu, Dimitri Linten, Brecht Truijen

Publikováno v: IRPS

The continued challenge of front-end-of-line transistor reliability has long demanded physics-based SPICE compact models, not only for service lifetime estimation, but also for aging-aware device pathfinding with technology scaling and innovation. He

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1053241c64c305f200b7d60a27939559
https://doi.org/10.1109/irps46558.2021.9405222

Zobrazit plný text záznamu

Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping

Autor: M. Garcia Bardon, Guido Groeseneken, J. Van Houdt, Mihaela Popovici, Philippe Roussel, Y. Xiang, Naoto Horiguchi, B. Kaczer, Brecht Truijen, Lars-Ake Ragnarsson, M. Thesberg, Nur K. Alam, Bertrand Parvais, Anne S. Verhulst

Publikováno v: 2019 IEEE International Electron Devices Meeting (IEDM).

We present a kinetics-based analysis of the steep slope operation of ferroelectric (FE) FETs built on (i) a statistical multidomain nucleation-propagation mechanism of FE polarization switching and (ii) charge trapping in the high- K FE oxide. With a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8f16e657b0ffe468dcf0f761a4f4e14
https://doi.org/10.1109/iedm19573.2019.8993492

Zobrazit plný text záznamu

HfZrO Ferroelectric Characterization and Parameterization of Response to Arbitrary Excitation Waveform

Autor: B. Kaczer, Mihaela Popovici, Ph. J. Roussel, Naoto Horiguchi, Nur K. Alam, J. Van Houdt, Lars-Ake Ragnarsson, Anne S. Verhulst, Bart Vermeulen, Brecht Truijen, M. Thesberg, M.M. Heyns

Publikováno v: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Response of a metal\ferroelectric Hf 0.5 Zr 0.5 O 2 \metal capacitor to an arbitrary excitation is investigated by polarization reversal curves and switching speed characterization. Results are explained in a steady-state Preisach as well as a modifi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c6c0fa50e409dd13d637551ec59e59f2
https://doi.org/10.1109/s3s46989.2019.9320678

Zobrazit plný text záznamu

Compact Model of the Entire I-V Characteristic for Accurate Description of the Asymmetric Degradation of pMOSFETs during Off-State Stress

Autor: Dimitri Linten, Jacopo Franco, Philippe Roussel, Brecht Truijen

Publikováno v: 2019 IEEE International Integrated Reliability Workshop (IIRW).

We propose a compact model description of the entire I d -V g characteristic, based on the EKV model, and extended to capture the complex I d -V g distortion induced by asymmetric hot carrier degradation. In particular, we apply the methodology to mo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b5d5dfe0773692f43894f098a610c43
https://doi.org/10.1109/iirw47491.2019.8989890

Zobrazit plný text záznamu

Euclidean Axion Wormholes Have Multiple Negative Modes

Autor: Thomas Van Riet, Brecht Truijen, Thomas Hertog

Publikováno v: Physical Review Letters

We show that Euclidean axion wormholes in theories of gravity coupled to a single axion have several independent inhomogeneous perturbations that lower the Euclidean action. Our analysis relies on a judiciously chosen gauge-invariant variable which m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8475fd41a92dd33b7c833d80fb31480d
http://repo.scoap3.org/api

Zobrazit plný text záznamu

Defect profiling in FEFET Si:HfO2 layers

Autor: Laurent Breuil, Yusuke Higashi, Ben Kaczer, Valery V. Afanas'ev, K. Banerjee, Taehwan Jung, G. Van den bosch, Barry O'Sullivan, Brecht Truijen, Sergiu Clima, R.A. Izmailov, S. R. C. McMitchell, J. Van Houdt, Dimitri Linten, V. Putcha, Nicolo Ronchi, Eddy Simoen, Robin Degraeve

Publikováno v: Applied Physics Letters. 117:203504

Ferroelectric Si-doped HfO2 is a promising candidate for future generation memory devices. However, such devices are vulnerable to significant threshold voltage shifts resulting from charge trapping in oxide defects. We use complementary characteriza

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a60e2453a3247356669b4409fe09005
https://doi.org/10.1063/5.0029072

Zobrazit plný text záznamu

Holography, brane intersections and six-dimensional SCFTs

Autor: Brecht Truijen, Nikolay Bobev, Giuseppe Dibitetto, Fridrik Freyr Gautason

Publikováno v: JHEP
JHEP, 2017, 02, pp.116. ⟨10.1007/JHEP02(2017)116⟩
Journal of High Energy Physics
JHEP, 2017, 02, pp.116. 〈10.1007/JHEP02(2017)116〉
Journal of High Energy Physics, Springer, 2017, 02, pp.116. ⟨10.1007/JHEP02(2017)116⟩
Journal of High Energy Physics, 2017, 02, pp.116. ⟨10.1007/JHEP02(2017)116⟩

We study supersymmetric intersections of NS5-, D6- and D8-branes in type IIA string theory. We focus on the supergravity description of this system and identify a "near horizon" limit in which we recover the recently classified supersymmetric seven-d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d10d0ed72eeacc9547b1747c2956ac01
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-318956

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání