Effects of dielectric materials on electromigration failure.

Autor: Doan, J. C., Lee, S., Lee, S.-H., Flinn, P. A., Bravman, J. C., Marieb, T. N.

Publikováno v: Journal of Applied Physics; 6/15/2001, Vol. 89 Issue 12, p7797, 12p, 9 Black and White Photographs, 1 Diagram, 1 Chart, 9 Graphs

Effects of barrier layer and annealing on abnormal grain growth in copper thin films.

Autor: Zielinski, E. M., Vinci, R. P., Bravman, J. C.

Publikováno v: Journal of Applied Physics; 10/15/1994, Vol. 76 Issue 8, p4516, 8p, 2 Black and White Photographs, 1 Diagram, 9 Graphs

Determination of high-field-enhanced emission rates with the constant capacitance-voltage transient technique.

Autor: Chang, M. B., Tomokage, H., Shiau, J. J., Bube, R. H., Bravman, J. C.

Publikováno v: Journal of Applied Physics; 4/1/1989, Vol. 65 Issue 7, p2734, 5p, 5 Graphs

Microtexture and strain in electroplated copper interconnects

Autor: Spolenak, R., Barr, D. L., Gross, M. E., Evans-Lutterodt, K., Brown, W. L., Nobumichi Tamura, Macdowell, A. A., Celestre, R. S., Padmore, H. A., Valek, B. C., Bravman, J. C., Flinn, P., Marieb, T., Keller, R. R., Batterman, B. W., Patel, J. R.

Publikováno v: Spolenak, Ralph; Barr, D.L.; Gross, M.E.; Evans-Lutterodt, K.; Brown, W.L.; Tamura, N.; et al.(2001). Microtexture and strain in electroplated copper interconnects. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/9z58w046
Scopus-Elsevier

The microstructure of narrow metal conductors in the electrical interconnections on IC chips has often been identified as of major importance in the reliability of these devices. The stresses and stress gradients that develop in the conductors as a r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5839a29ff88f47929668e5cf75939146
http://www.escholarship.org/uc/item/9z58w046

Spatially Resolved Characterization of Electromigration-Induced Plastic Deformation in al (0.5WT% CU) Interconnect.

Autor: Barabash, R. I., Ice, G. E., Tamura, N., Patel, J. R., Valek, B. C., Bravman, J. C., Spolenak, R.

Publikováno v: MRS Online Proceedings Library; 2002, Vol. 738 Issue 1, p1-6, 6p