Zobrazeno 1 - 10
of 849
pro vyhledávání: '"Brault, J"'
Autor:
Giannazzo, F., Dagher, R., Schilirò, E., Panasci, S. E., Greco, G., Nicotra, G., Roccaforte, F., Agnello, S., Brault, J., Cordier, Y., Michon, A.
Publikováno v:
Nanotechnology 32 (2020) 015705
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates
Externí odkaz:
http://arxiv.org/abs/2009.08673
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated
Externí odkaz:
http://arxiv.org/abs/1903.09400
A theoretical interpretation of the photoluminescence excitation spectra of self-organized polar GaN/(Al,Ga)N quantum dots is proposed. A numerical method assuming a realistic shape of the dots and including the built-in electric field effects is dev
Externí odkaz:
http://arxiv.org/abs/1403.6141
Publikováno v:
Journal of Applied Physics; 1/21/2023, Vol. 133 Issue 3, p1-13, 13p
We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0304157
Akademický článek
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Autor:
Damilano, B., Vézian, S., Portail, M., Alloing, B., Brault, J., Courville, A., Brändli, V., Leroux, M., Massies, J.
Publikováno v:
In Journal of Crystal Growth 1 November 2017 477:262-266
We have recorded spectra of iron-neon and iron-argon hollow cathode lamps in the region 1700A -- 5um (59000 -- 2000cm-1), with Fourier transform (FT) spectrometers at the National Solar Observatory, Tucson, Arizona, U.S.A. and Imperial College, Londo
Externí odkaz:
http://arxiv.org/abs/astro-ph/9404049
Publikováno v:
In Applied Surface Science 15 December 2016 389:1156-1160
Autor:
Rouly, Daniel, Austin, Patrick, Tasselli, Josiane, Morancho, Frédéric, Isoird, Karine, Brault, J, Cordier, Y
Publikováno v:
EMRS-2022 Fall Meeting European Materials Research Society
EMRS-2022 Fall Meeting European Materials Research Society, Sep 2022, Varsovie, Poland
EMRS-2022 Fall Meeting European Materials Research Society, Sep 2022, Varsovie, Poland
International audience; Different technologies have been developed for the realization of AlGaN/GaN HEMTs exhibiting the normally-off functionality, such the gate recess or the introduction of a P-GaN layer for lifting-up the conduction band level un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4074::8201536af8169d6f05b93fb61081fdf4
https://hal.science/hal-03697766
https://hal.science/hal-03697766