Zobrazeno 1 - 10
of 489
pro vyhledávání: '"Brammertz, G"'
Autor:
Birant, Gizem, de Wild, J., Kohl, T., Buldu, D.G., Brammertz, G., Meuris, M., Poortmans, J., Vermang, B.
Publikováno v:
In Solar Energy 1 September 2020 207:1002-1008
Autor:
Oueslati, S., Kauk-Kuusik, M., Neubauer, C., Mikli, V., Meissner, D., Brammertz, G., Vermang, B., Krustok, J., Grossberg, M.
Publikováno v:
In Solar Energy 1 March 2020 198:586-595
Autor:
de Wild, J., Simor, M., Buldu, D.G., Kohl, T., Brammertz, G., Meuris, M., Poortmans, J., Vermang, B.
Publikováno v:
In Thin Solid Films 1 February 2019 671:44-48
Publikováno v:
In Thin Solid Films 31 January 2019 670:76-79
A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se2 solar cell
Autor:
Suresh, S., de Wild, J., Kohl, T., Buldu, D.G., Brammertz, G., Meuris, M., Poortmans, J., Isabella, O., Zeman, M., Vermang, B.
Publikováno v:
In Thin Solid Films 1 January 2019 669:399-403
Autor:
Brammertz, G., Caymax, M., Mols, Y., Degroote, S., Leys, M., Van Steenbergen, J., Winderickx, G., Borghs, G., Meuris, M.
Publikováno v:
Proceedings of the 210th Meeting of The Electrochemical Society, Cancun, Mexico, October 29-November 3, 2006
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is fully selec
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703664
Autor:
Kohl, Thierry, Brammertz, G., de Wild, J., Neuwirth, M., Meuris, M., Poortmans, J., Vermang, B.
Publikováno v:
In Thin Solid Films 30 August 2018 660:247-252
Autor:
Brammertz, G.
Publikováno v:
G. Brammertz, Ph.D. thesis, University of Twente, Enschede, The Netherlands, ISBN 90-365-1970-5, 2003
This thesis describes the development of low-energy gap superconducting tunnel junctions (STJs) for use as photon detectors, with as a main goal the improvement of the energy resolution in both the optical and the x-ray energy domain. A new model for
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407327
Publikováno v:
Appl. Phys. Lett. 80, 2955, 2002
A generalized model for the critical temperature Tc of superconducting bilayers is presented, which is valid with no restrictions to film thicknesses, Tc of the layers and interface resistivity. The model is verified experimentally on a series of Nb-
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407320
Publikováno v:
presented at SPIE Astronomical Telescopes and Instrumentation, 21-25 June 2004, Glasgow, UK
Superconducting tunnel junctions are being developed for application as photon detectors in astronomy. We present the latest results on the development of very high quality, very low critical temperature junctions, fabricated out of pure Al electrode
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407319