Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs

Autor: Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei D. Zhang, Nour E. Bourzgui, Ali Soltani

Publikováno v: IEEE Access, Vol 6, Pp 42721-42728 (2018)

Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic conta

Externí odkaz: https://doaj.org/article/bbf22d2d693443598d34f056dbb22158

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Autor: Ali Soltani, Brahim Benbakhti, S. J. Duffy, K. Ahmeda, Hassane Ouazzani Chahdi, M. Boucherta, Karol Kalna, Nour Eddine Bourzgui, Weidong Zhang, M. Mattalah

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩

International audience; A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f18a38a0d83dd4626902e1f32bf9687
https://doi.org/10.1109/ted.2020.2980329

Mechanisms of a rectifying TiN gate contact for AlGaN/GaN HEMTs on silicon substrate

Autor: Maghnia Mattalah, Brahim Benbakhti, Nour Eddine Bourzgui, Hassane Ouazzani Chahdi, J.-C. Gerbedoen, Abdelatif Jaouad, Ali Soltani

Publikováno v: IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩

Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN $/$ GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc95025a6b77e9e7dde36444d3d987a0
https://hal.archives-ouvertes.fr/hal-03322826

Device and Circuit Performance of the Future Hybrid III–V and Ge-Based CMOS Technology

Autor: Brahim Benbakhti, Ali Soltani, Karol Kalna, K. H. Chan

Publikováno v: IEEE Transactions on Electron Devices. 63:3893-3899

The device and circuit performance of a 20-nm gate length InGaAs and Ge hybrid CMOS based on an implant free quantum well (QW) device architecture is studied using a multiscale approach combining ensemble Monte Carlo simulation, drift-diffusion simul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d51e61b53edcce14fbc5ce67539034f
https://doi.org/10.1109/ted.2016.2603188

A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs

Autor: Hassan Maher, K. Ahmeda, Brahim Benbakhti, M. Boucherta, Weidong Zhang, Karol Kalna, Ali Soltani, S. J. Duffy, Nour-Eddine Bourzgui

Publikováno v: 2018 13th European Microwave Integrated Circuits Conference (EuMIC)
2018 13th European Microwave Integrated Circuits Conference (EuMIC), Sep 2018, Madrid, Spain. pp.214-217, ⟨10.23919/EuMIC.2018.8539935⟩

International audience; The source/drain and gate induced charge trapping within an AlGaN/GaN high electron mobility transistor is studied, under normal device operation, by excluding self-heating effects, for the first time. Through direct measureme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b1cbd3d510f28b133c526f281ae61d3
https://doi.org/10.23919/eumic.2018.8539935