Strain engineering in III-V photonic components through structuration of SiN x films

Autor: Brahim Ahammou, Aysegul Abdelal, Jean-Pierre Landesman, Christophe Levallois, Peter Mascher

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2022, 40 (1), pp.012202. ⟨10.1116/6.0001352⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2022, 40 (1), pp.012202. ⟨10.1116/6.0001352⟩

International audience; We describe work to quantify the effects of structured dielectric thin films, such as SiNx, at the surface of III-V semiconductors, in terms of strain engineering with applications to photonic components such as waveguides and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80cd046c7d6c43a95c7de727639f6172
https://hal.archives-ouvertes.fr/hal-03481784

Design and Fabrication of Multiple-Color-Generating Thin-Film Optical Filters for Photovoltaic Applications

Autor: Paramita Bhattacharyya, Brahim Ahammou, Fahmida Azmi, Rafael Kleiman, Peter Mascher

Publikováno v: ECS Meeting Abstracts. :1064-1064

The use of electric vehicles (EVs) can reduce greenhouse gas emissions, air pollution, dependency on fossil fuels, and their adverse health effects on humans. But, we can only utilize the full environmental benefits of EVs when they are charged with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::876a4cef38c517e133f33a208affe805
https://doi.org/10.1149/ma2022-01191064mtgabs

Optical and Mechanical Properties of Europium-Doped Silicon Oxynitride Thin Films

Autor: Fahmida Azmi, Brahim Ahammou, Paramita Bhattacharyya, Peter Mascher

Publikováno v: ECS Meeting Abstracts. :1093-1093

Light emission from silicon-based systems has gained significant interest over the past few decades with the vision of developing an optoelectronic platform that can be integrated with the existing metal-oxide-semiconductor (MOS) technology [1]. Rare

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d565535727061c97ea56bed8d89a7556
https://doi.org/10.1149/ma2022-01201093mtgabs

Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress

Autor: Merwan Mokhtari, Daniel T. Cassidy, Alain Moréac, Solène Gérard, Marc Fouchier, Christophe Levallois, Brahim Ahammou, Philippe Pagnod-Rossiaux, Erwine Pargon, Jean-Pierre Landesman, François Laruelle

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2020, 706, pp.138079. ⟨10.1016/j.tsf.2020.138079⟩
Thin Solid Films, 2020, 706, pp.138079. ⟨10.1016/j.tsf.2020.138079⟩

International audience; We measured the details of the strain/stress fields produced in GaAs(100) and InP(100) substrates by the presence of narrow dielectric stripes processed from thin films obtained by plasma-enhanced chemical vapor deposition wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67ce669a528ba0adaf7d8b86547ff37e
https://hal.archives-ouvertes.fr/hal-02876805

Mechanical and Optical Properties of Amorphous SiN-Based Films Prepared By ECR PECVD and CCP PECVD

Autor: Christophe Levallois, Peter Mascher, Jean-Pierre Landesman, Aysegul Abdelal, Brahim Ahammou

Publikováno v: ECS Meeting Abstracts. :858-858

Hydrogenated amorphous silicon nitride (a-SiN:H) and silicon carbonitride (a-SiCN:H) films grown by plasma enhanced chemical vapor deposition (PECVD) are widely investigated for their interesting optical and electrical properties [1]. In this work, w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f7354402e9b0552cca472b9bcb3898cb
https://doi.org/10.1149/ma2021-0121858mtgabs