Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Bradley. M. Melnick"'
Autor:
Mark H. Engelhard, S. He, R. L. Hance, Bradley M. Melnick, P. Alluri, Alan S. Lea, J. Finder, Y. Gao
Publikováno v:
Scopus-Elsevier
(Ba, Sr)TiO3 (BST) thin films have been grown on planar Ir/Si and Pt/Si substrates and on three-dimensional (3D) Ir electrodes by metalorganic chemical vapor deposition using two kinds of β-diketonate-based BST precursors. Film growth was studied as
Autor:
Koji Arita, Sufi Zafar, Yasuhiro Shimada, Bruce E. White, Bo Jiang, D. J. Taylor, M. Azuma, Robert E. Jones, H. Hirano, J. Nakane, Yasuhiro Uemoto, D. Price, T. Nakakum, Tatsuo Otsuki, Peter Zurcher, S.J. Gillespie, Bradley M. Melnick, Yuji Judai, Eiji Fujii, G. Kano, S. Hayashi, Nobuyuki Moriwaki, Tatsumi Sumi, P.Y. Chu
Publikováno v:
Integrated Ferroelectrics. 17:21-30
Ferroelectric non-volatile memories (FENVM) are fabricated using spin-coat and fire deposition of the SrBi2Ta2O9 layered perovskite ferroelectric. Test memories using a 2 transistor-2 capacitor bit cell, top contacts to capacitors and single level me
Autor:
Carlos A. Paz De Araujo, Larry D. McMillan, Bradley. M. Melnick, Joseph D. Cuchiaro, James. F. Scott
Publikováno v:
Ferroelectrics. 104:241-256
Autor:
Peter Zurcher, Bo Jiang, P.Y. Chu, Bradley M. Melnick, Wei Chen, D. J. Taylor, Sufi Zafar, S.J. Gillespie, Robert E. Jones, Bruce E. White, N. Cave
Publikováno v:
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics.
Effects of processing parameters and thickness on the properties of spin-on SrBi/sub 2/Ta/sub 2/O/sub 7/ (SET) films were investigated. Film crystallinity was improved with heat treatment but surface roughness also increased significantly above 400/s
Autor:
Alan S. Lea, S. He, Y. Gao, Mark H. Engelhard, P. Alluri, Bradley M. Melnick, R. L. Hance, J. Finder
Publikováno v:
MRS Proceedings. 541
Metalorganic chemical vapor deposition (MOCVD) has been used to grow (Ba,Sr)TiO3 thin films on Ir/SiO2/Si substrates. β-diketonates of Ba, Sr, and Ti were used as the precursors, and delivered to the reactor via direct-liquid injection. Growth rate
Autor:
Tom Remmel, P. Alluri, Sufi Zafar, Clarence J. Tracy, Bruce E. White, Doug Roberts, Mark V. Raymond, T.-L. Tsai, P.Y. Chu, Bradley M. Melnick, S.J. Gillespie, Peter Zurcher, Robert E. Jones, M. Kim, Bo Jiang
Publikováno v:
MRS Proceedings. 541
Long recognized as the best potential solution to the continued scaling of the onetransistor/one-capacitor standalone dynamic random access memory (DRAM) beyond a gigabit, barium strontium titanate (BST) and other high permittivity dielectrics are fa
Autor:
Peir Y. Chu, D. J. Taylor, Bradley M. Melnick, Bruce E. White, Sufi Zafar, Bo Jiang, Robert E. Jones, D. Gentile, S.J. Gillespie, V. Balu, Peter Zurcher
Publikováno v:
MRS Proceedings. 493
The dielectric constant and dispersion of sputtered barium strontium titanate (BST) thin films deposited on Ir electrodes have been measured as a function of frequency and dielectric film thickness. Based on the measured variation in capacitance dens
Autor:
David Gentile, Bradley M. Melnick, Bruce E. White, Tom Remmel, S.J. Gillespie, Bo Jiang, Robert E. Jones, Sufi Zafar, Peir Chu, Peter Zurcher, D. J. Taylor
Publikováno v:
MRS Proceedings. 493
The correlation between the dielectric constant and dispersion is investigated for barium strontium titanate (BST) capacitors with platinum and iridium electrodes. For platinum electrode capacitors, dispersion decreases with increasing dielectric con
Autor:
Tom Remmel, Wei Chen, Peter Fejes, E. P. Ehlert, M. Kottke, L.-H. Chang, B. A. Baumert, Bradley M. Melnick, Clarence J. Tracy, T.-L. Tsai, D. F. Sullivan
Publikováno v:
MRS Proceedings. 493
Barium Strontium Titanate films have been deposited by rf magnetron sputtering and have been studied with respect to Ba/Sr ratio. Physical and electrical characterization has been done as a function of temperature, thickness, and composition, and res
Publikováno v:
Integrated Ferroelectrics. 16:xv-xvi