Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Bradley D. Christiansen"'
Autor:
Bradley D. Christiansen, Eric R. Heller, Ronald A. Coutu, Ramakrishna Vetury, Jeffrey B. Shealy
Publikováno v:
Active and Passive Electronic Components, Vol 2012 (2012)
Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>
Externí odkaz:
https://doaj.org/article/1fff87dd96524908a41d169f824bda5b
Autor:
Eric R. Heller, Stephen E. Tetlak, Ramakrishna Vetury, B. S. Poling, Jeffrey B. Shealy, Bradley D. Christiansen, James P. Theimer, Ronald A. Coutu, Robert A. Lake, Christopher A. Bozada, Glen D. Via
Publikováno v:
Electronics; Volume 5; Issue 3; Pages: 32
Electronics, Vol 5, Iss 3, p 32 (2016)
Electronics, Vol 5, Iss 3, p 32 (2016)
The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::090f60a30e4b49c6cece7c34fc6986f5
Autor:
Ronald A. Coutu, Jeffrey B. Shealy, Bradley D. Christiansen, Eric R. Heller, Ramakrishna Vetury
Publikováno v:
Active and Passive Electronic Components, Vol 2012 (2012)
Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2336ff7af1d9733e93ef1f5eab5e955a
https://doaj.org/article/1fff87dd96524908a41d169f824bda5b
https://doaj.org/article/1fff87dd96524908a41d169f824bda5b
Autor:
G. David Via, Bradley D. Christiansen, Eric R. Heller, Ronald A. Coutu, R. Vetury, B. S. Poling, Jeffrey B. Shealy
Publikováno v:
2011 International Reliability Physics Symposium.
We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage. In particular, the high-voltage-tested devices di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1d55802525afafa3d5c686646aef08
https://doi.org/10.1109/irps.2011.5784556
https://doi.org/10.1109/irps.2011.5784556
Publikováno v:
FPT
Field-programmable gate arrays (FPGAs) are increasingly used in system designs, but their vulnerability to reverse engineering could lead to lost profits or security breaches. Thus, high FPGA design security is needed with low performance penalties a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c638651454f86c122265e56858a160d
https://doi.org/10.1109/fpt.2006.270351
https://doi.org/10.1109/fpt.2006.270351
Publikováno v:
2006 IEEE International Conference on Field Programmable Technology; 2006, p373-376, 4p