Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Bradley A. Orner"'
Autor:
Robert M. Rassel, David C. Sheridan, Qizhi Liu, Alvin J. Joseph, Bradley A. Orner, Brian P. Gaucher, Xuefeng Liu, Jeffrey B. Johnson
Publikováno v:
Semiconductor Science and Technology. 22:S208-S211
An integrated p-i-n diode for use in SiGe BiCMOS technology applications has been developed. The device may be used into the MMW frequency range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3ac9b9a74f8ba41b736cb2ef97971ac
https://doi.org/10.1088/0268-1242/22/1/s49
https://doi.org/10.1088/0268-1242/22/1/s49
Autor:
K. Walter, Janusz Grzyb, Ullrich R. Pfeiffer, E. Mina, Scott K. Reynolds, Bradley A. Orner, Brian P. Gaucher, Alvin J. Joseph, Brian Floyd, R. Wachnik, Hanyi Ding
Publikováno v:
Semiconductor Science and Technology. 22:S236-S243
This paper establishes the viability and suitability of silicon germanium (SiGe8HP) technology, enablement tools and circuits to millimetre-wave applications today and a roadmap to the future. Key elements discussed include SiGe technology and design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e3ea90172724783c0b3f931780e70d
https://doi.org/10.1088/0268-1242/22/1/s55
https://doi.org/10.1088/0268-1242/22/1/s55
Autor:
David C. Ahlgren, Bradley A. Orner, Robert M. Rassel, David C. Sheridan, Qizhi Liu, James S. Dunn, Mattias E. Dahlstrom, Xuefeng Liu, Alvin J. Joseph
Publikováno v:
physica status solidi c. 3:448-451
We present the advances in Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) and BiCMOS technology capabilities to address the emerging millimetre-wave (mmWave) applications. SiGe HBTs with fMAX performance reaching 350 GHz that are inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bb953a8c2243a2aeab38aa53dff5bf
https://doi.org/10.1002/pssc.200564170
https://doi.org/10.1002/pssc.200564170
Autor:
Fernando Guarin, Gregory G. Freeman, David C. Ahlgren, David L. Harame, Robert A. Groves, S. St Onge, Ping-Chuan Wang, Jae-Sung Rieh, D. A. Herman, Bradley A. Orner, Steven H. Voldman, Kenneth J. Stein, Douglas D. Coolbaugh, J. Dunn, S. Subbanna, Louis D. Lanzerotti, Y. Hammad, Bernard S. Meyerson, Michael J. Zierak, Natalie B. Feilchenfeld, David R. Greenberg, Alvin J. Joseph
Publikováno v:
IBM Journal of Research and Development. 47:101-138
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9370cf2d9ac9e0b2885e76630d2b92f0
https://doi.org/10.1147/rd.472.0101
https://doi.org/10.1147/rd.472.0101
Autor:
Brian P. Gaucher, Brian Floyd, N. Hoivik, Bradley A. Orner, Troy J. Beukema, Duixian Liu, Alberto Valdes-Garcia, Scott K. Reynolds
Publikováno v:
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
A feature-rich second-generation 60-GHz transceiver chipset is introduced. It integrates dual-conversion superheterodyne receiver and transmitter chains, a sub-integer frequency synthesizer, full programmability from a digital interface, modulator an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ebc2a50950e2f7c3c2b6a948420523f
https://doi.org/10.1109/bipol.2007.4351867
https://doi.org/10.1109/bipol.2007.4351867
Autor:
Hanyi Ding, B. Dewitt, Kwanhim Lam, Brian P. Gaucher, Essam Mina, J. Rascoe, Xuefeng Liu, Bradley A. Orner
Publikováno v:
2007 European Microwave Integrated Circuit Conference.
Feasibility of wideband on-chip RF switch operating at millimeter wave frequencies using PIN diodes in IBM .13 mum SiGe technology is demonstrated. A SPDT reflective switch targeting 60 GHz wireless and radar applications is designed, fabricated, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0e5c748b3bcc2e0184600a238a65665
https://doi.org/10.1109/emicc.2007.4412659
https://doi.org/10.1109/emicc.2007.4412659
Autor:
Bradley A. Orner, Qizhi Liu, Jeffrey Johnson, Robert Rassel, Xuefeng Liu, David Sheridan, Alvin Joseph, Brian Gaucher
Publikováno v:
2006 International SiGe Technology and Device Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0b0014c60fc5b82e5b61492dcdd5f4e
https://doi.org/10.1109/istdm.2006.1716054
https://doi.org/10.1109/istdm.2006.1716054
Autor:
Robert M. Rassel, Alvin J. Joseph, Bradley A. Orner, Marwan H. Khater, David C. Ahlgren, A. Pothiawala, Qizhi Liu, J. Dunn, Mattias E. Dahlstrom, Hanyi Ding
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
The paper presents a 0.13 mum SiGe BiCMOS technology for millimeter wave applications. This technology features a high performance HBT (fT = 300 GHz /fmax = 330 GHz) along with various newly developed millimeter wave features, such varactor, Schottky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58aaed604da539a150972c1d13c0ac50
https://doi.org/10.1109/bipol.2006.311157
https://doi.org/10.1109/bipol.2006.311157
Autor:
Louis D. Lanzerotti, Marwan H. Khater, Natalie B. Feilchenfeld, Robert M. Rassel, S. St Onge, J. Dunn, Douglas D. Coolbaugh, David L. Harame, Bradley A. Orner, Jeffrey B. Johnson, Ephrem G. Gebreselasie, Alvin J. Joseph
Publikováno v:
CICC
High performance communications applications have made technology choices more important than ever. Silicon Germanium (SiGe) BiCMOS has enabled the widespread introduction of many these applications by providing superior cost and integration capabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3dc29c9c4731bc6e795b028df62cd53
https://doi.org/10.1109/cicc.2006.320882
https://doi.org/10.1109/cicc.2006.320882
Autor:
Brian P. Gaucher, R. Wachnik, Troy J. Beukema, K. Walter, Bradley A. Orner, Brian Floyd, Alvin J. Joseph, Ullrich R. Pfeiffer, Scott K. Reynolds, E. Mina
Publikováno v:
2006 International SiGe Technology and Device Meeting.
We described newly developed, enhanced technology and enablement features that lead to state of the art mmwave ICs capable of meeting Gbps speeds required of emerging applications. Die photographs of the Rx and Tx are shown in (Floyd, 2006). The die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed55d0fe18f99e904e0ec771dbe2fd26
https://doi.org/10.1109/istdm.2006.246556
https://doi.org/10.1109/istdm.2006.246556