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of 4
pro vyhledávání: '"Brad McGee"'
Autor:
Brandon Passmore, Richard Lollar, Ross Liederbach, Jennifer Stabach, Chad B. O'Neal, B. McPherson, Brad McGee
Publikováno v:
Journal of Electronic Materials. 45:245-254
Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript,
Publikováno v:
2017 IEEE International Workshop On Integrated Power Packaging (IWIPP).
Silicon Carbide (SiC) wide band gap power devices are capable of operating at extremely high current densities and switching frequencies. Systems embracing these benefits can achieve a substantial increase in power density. However, cooling becomes e
Autor:
Robert Shaw, Edward VanBrunt, Daniel Martin, Brandon Passmore, T. McNutt, Matthew Wells, Josh Bradshaw, Dave Grider, Zach Cole, Brett Hull, Jennifer Stabach, Brad McGee
Publikováno v:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
In this work, a novel high performance 10 kV / 240 A silicon carbide (SiC) metal-oxide field-effect transistor (MOSFET) power module design is presented. The key features for this power module include reworkability, low parasitic design, low thermal
Autor:
Sergei Storkov, Austin Curbow, Ty McNutt, Kraig Olejniczak, Kenny George, Tom Flint, Robert Shaw, Brandon Passmore, Peter Killeen, David Simco, Brad McGee
Publikováno v:
Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays.
In this paper, we describe the system-level packaging of a 30 kW continuous, 55 kW peak, traction inverter to showcase the electro-thermal-mechanical performance enhancements of silicon carbide (SiC), a wide bandgap (WBG) semiconductor, over silicon.