Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Brad H. Reelfs"'
Publikováno v:
SPIE Proceedings.
To overcome the resolution limits of the current generation of steppers, mask makers are forced to include an ever-growing number of OPC features on 65 nm node masks. Although lithography techniques have improved significantlyin the last five years,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c94273e74b5e604ac7de953efd66f53
https://doi.org/10.1117/12.557706
https://doi.org/10.1117/12.557706
Publikováno v:
SPIE Proceedings.
The ITRS roadmap indicates that significant improvements in photomask dry etching will be necessary to achieve the design goals of 90nm and 65nm technology node masks. Although some existing dry etch systems are capable of R&D work on these masks, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e7df372124599da6144274d884400e7
https://doi.org/10.1117/12.518138
https://doi.org/10.1117/12.518138
Autor:
Chris Constantine, Jong Shin, Jason M. Benz, Michael S. Hibbs, Jason Plumhoff, Brad H. Reelfs, Emmanuel Rausa, Timothy A. Brunner
Publikováno v:
SPIE Proceedings.
As the 193 nm generation of steppers reaches the limit of its capability, alternating aperture phase shift masks (altPSMs) are necessary to extend the lifetime of these tools. The fabrication of a production-worthy altPSM requires that the quartz dry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b0dd9e5af55e360da2e65ee720def1
https://doi.org/10.1117/12.504198
https://doi.org/10.1117/12.504198