Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Brad Falch"'
Publikováno v:
SPIE Proceedings.
This paper presents a new etch-aware after development inspection (ADI) model with an inverse etch bias filter. We model the etch bias as a function of pattern geometry parameters, and we introduce it to the ADI model by means of an inverse bias matr
Autor:
Lena Zavyalova, Sung-Woo Lee, Yongfa Fan, Kyoil Koo, Sooryong Lee, Thomas Schmoeller, Chun-Suk Suh, Jason Huang, Irene Su, Moon-Gyu Jeongb, Junghoon Ser, Brad Falch
Publikováno v:
SPIE Proceedings.
As semiconductor manufacturing moves to 32nm and 22nm technology nodes with 193nm water immersion lithography, the demand for more accurate OPC modeling is unprecedented to accommodate the diminishing process margin. Among all the challenges, modelin
Autor:
Kevin Lucas, Yongfa Fan, Ebo Croffie, Lawerence S. Melvin, Jianliang Li, Qiaolin Zhang, Brad Falch
Publikováno v:
SPIE Proceedings.
As the semiconductor industry moves to the 45nm node and beyond, the tolerable lithography process window significantly shrinks due to the combined use of high NA and low k1 factor. This is exacerbated by the fact that the usable depth of focus at 45
Autor:
Yunqiang Zhang, Lena Zavyalova, Ebo Croffie, Brian Ward, Kevin Lucas, Brad Falch, Charlie Zhang, Yongfa Fan, Jianliang Li, Lawrence S. Melvin
Publikováno v:
SPIE Proceedings.
A precise lithographic model has always been a critical component for the technique of Optical Proximity Correction (OPC) since it was introduced a decade ago [1] . As semiconductor manufacturing moves to 32nm and 22nm technology nodes with 193nm waf
Autor:
Yong-Jin Chun, Ho-Jin Park, Sungsoo Suh, Brad Falch, Young-Mi Lee, Suk-Joo Lee, Sung-Woo Lee, Sooryong Lee, Han-Ku Cho
Publikováno v:
SPIE Proceedings.
Several criteria are applied to optimize the best illumination and bias condition for a layer. Normalized image log-slope (NILS) and mask error enhancement factor (MEEF) are promising candidates to simply decide the optimized condition. NILS represen
Autor:
Irene Yi-Ju Su, Chuen Huei Yang, Chia Wei Huang, Sheng Yuan Huang, Brad Falch, Te Hung Wu, Pei Ru Tsai
Publikováno v:
SPIE Proceedings.
In previous OPC model calibrations, most of the work was focused on how to calibrate a model for the best process conditions. With process tolerance decreasing in coming lithography generations, it is increasingly important to be able to predict patt
Conference
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Conference
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