Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Brad D. Weaver"'
Autor:
Brad D Weaver, Nicolas Roche, Andrew D. Koehler, Francis J Kub, Stephen P. Buchner, Travis J. Anderson, Ani Khachatrian, Karl D. Hobart
Publikováno v:
ECS Transactions. 75:13-20
Superior advantages of AlGaN/GaN high electron mobility transistors (HEMTs) from a size, weight, and power perspective make this technology desirable for use in outer space applications. However, the harsh environment in space includes bombardment of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd36eb9dc5a093b4728538ef3133b473
https://doi.org/10.1149/07540.0013ecst
https://doi.org/10.1149/07540.0013ecst
Autor:
Jennifer K. Hite, Jordan D Greenlee, Brad D Weaver, Matthew Porter, Oscar D. Dubon, Todd R Weatherford, Martina Luysberg, Travis J. Anderson, Andrew D. Koehler, Michael A. Mastro, Karl D. Hobart, Petra Specht, Michael Wade, Marko J. Tadjer, Fritz J. Kub
Publikováno v:
ECS Transactions. 66:15-20
Gallium nitride high electron mobility transistors (HEMTs) have shown the potential to be highly resistant to radiation damage, making them ideal for use in microwave power amplifiers and DC/DC converters in space-based applications. To investigate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d61916efc70d0cd085a2547135d9c36e
https://doi.org/10.1149/06601.0015ecst
https://doi.org/10.1149/06601.0015ecst
Autor:
Brad D. Weaver, Julian J. McMorrow, Jeremy T. Robinson, Harold L. Hughes, Adam L. Friedman, Cory D. Cress, Brian J. Landi
Publikováno v:
MRS Communications. 1:27-31
We investigate the radiation response of single-walled carbon nanotube (SWCNT) thin-film transistors fabricated with 23 nm silicon oxynitride gate dielectric layers, fortotal ionizing doses (TIDs) of Co-60 gamma irradiation up to 2 Mrad(Si). Irradiat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5e73707b94a2a088b5cf4470e6f0561
https://doi.org/10.1557/mrc.2011.10
https://doi.org/10.1557/mrc.2011.10
Autor:
Seth M. Hubbard, Michael K. Yakes, Phillip P. Jenkins, S.R. Messenger, J. H. Warner, María Victoria González, David V. Forbes, K. Schmieder, Brad D. Weaver, David Scheiman, Matthew P. Lumb, Louise C. Hirst, Robert J. Walters, Cory D. Cress, Raymond Hoheisel, C. G. Bailey
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
The response of InGaAs quantum well solar cells (QWSCs) to proton irradiation is presented. The QWSCs consisted of sixteen layers of 5 nm InGaAs QWs / 10 nm InAlGaAs barriers were embedded into the i-region of a 1.0 eV InAlGaAs solar cell, and the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b30861ebb14f67a888318d4762f830a
https://doi.org/10.1109/pvsc.2014.6925531
https://doi.org/10.1109/pvsc.2014.6925531
Autor:
Brad D Weaver, Karl D. Hobart, Travis J. Anderson, Marko J. Tadjer, Jordan D Greenlee, Francis J Kub, Petra Specht, David I. Shahin, Andrew D. Koehler
Publikováno v:
ECS Meeting Abstracts. :1129-1129
Gallium nitride (GaN) high electron mobility transistors (HEMTs) have been recognized as a key enabling technology for power amplifiers and high power converters for next-generation military and civilian systems. The superiority of GaN over Si benefi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c3ced46b58f9e220278e5e52589059c
https://doi.org/10.1149/ma2015-02/30/1129
https://doi.org/10.1149/ma2015-02/30/1129
Autor:
Travis J. Anderson, Karl D. Hobart, Petra Specht, Marko J. Tadjer, Fritz J. Kub, Andrew D. Koehler, Todd R Weatherford, Matthew Porter, Jennifer K. Hite, Brad D Weaver
Publikováno v:
ECS Meeting Abstracts. :1920-1920
The reliability of AlGaN/GaN HEMTs is currently a limiting factor in the development of next-generation power amplifier technology. In this work, we use atomic-resolution transmission electron microscopy (TEM) to directly image the defects associated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5668c7e2561083adbb6cd0c4e7564a73
https://doi.org/10.1149/ma2013-02/25/1920
https://doi.org/10.1149/ma2013-02/25/1920
Autor:
Brian J. Landi, Cory D. Cress, Roberta A. DiLeo, Brad D. Weaver, Jamie E. Rossi, Christopher M. Schauerman, Scott R. Messenger, Alysha Helenic, Nathanael D. Cox, Seth M. Hubbard
Publikováno v:
Journal of Applied Physics. 112:119901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cfd3a3e267757a0656526c2ccbe2f02
https://doi.org/10.1063/1.4768435
https://doi.org/10.1063/1.4768435
Autor:
Scott R. Messenger, Brian J. Landi, Seth M. Hubbard, Alysha Helenic, Christopher M. Schauerman, Nathanael D. Cox, Jamie E. Rossi, Cory D. Cress, Roberta A. DiLeo, Brad D. Weaver
Publikováno v:
Journal of Applied Physics. 112:034314
The structural and electrical properties of electronic-type-separated (metallic and semiconducting) single wall carbon nanotube (SWCNT) thin-films have been investigated after irradiation with 150 keV 11B+ and 150 keV 31P+ with fluences ranging from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5491e70a3f4e0fd12315d5dce316605
https://doi.org/10.1063/1.4739713
https://doi.org/10.1063/1.4739713
Autor:
Ghosh, A. K., Basu, A. N.
Publikováno v:
Modern Physics Letters B; Feb1998, Vol. 12 Issue 2/3, p91-97, 7p
Autor:
Delhanty, Brenda
Publikováno v:
Religious Conference Manager; Apr2007, Vol. 19 Issue 2, p8-8, 1p