Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Brad D. Cantos"'
Autor:
Giorgio Giaretta, Arvydas Umbrasas, Jason P. Watson, Rashit F. Nabiev, Rene Dato, Michael Jansen, Sascha Hallstein, Brad D. Cantos, Glen P. Carey, Aram Mooradian, Greg Niven, Dicky Lee, Andrei V. Shchegrov, William R. Hitchens
Publikováno v:
SPIE Proceedings.
Laser-based projection displays have long attracted interest because of the multiple advantages (expanded color gamut, high resolution, longer lifetime, etc.) expected from lasers as compared to lamps. However, most of these advantages have been larg
Autor:
Brad D. Cantos, Greg Niven, Dicky Lee, Glen P. Carey, Aram Mooradian, Sascha Hallstein, William R. Hitchens, Jason P. Watson, Andrei V. Shchegrov, Arvydas Umbrasas, Ken Scholz, Michael Jansen, Jean-Michel Pelaprat
Publikováno v:
SPIE Proceedings.
Compact and efficient blue-green lasers have been receiving increasing interest in the last few years due to their applications in various industries: bio-instrumentation, reprographics, microscopy, etc. We report on the latest developments in freque
Autor:
Brad D. Cantos, Andrei V. Shchegrov, Jason P. Watson, Aram Mooradian, Vincent V. Doan, Michael K. Liebman, John G. McInerney, William R. Hitchens, Eva M. Strzelecka, Glen P. Carey, Dicky Lee, Alan Lewis, Charles A. Amsden, Arvydas Umbrasas
Publikováno v:
SPIE Proceedings.
We describe the design, fabrication and performance of novel, electrically pumped, vertical compound cavity 976nm InGaAs lasers that emit at 488nm via intracavity second harmonic generation. The resulting light source is an ideal replacement for Ar-i
Autor:
John G. McInerney, David Heald, Glen P. Carey, Keith W. Kennedy, Dicky Lee, Vincent V. Doan, Aram Mooradian, Wonill Ha, Jason P. Watson, Hailong Zhou, William R. Hitchens, Eva M. Strzelecka, Kevin L. Lear, Brad D. Cantos, Alan Lewis, Andrei V. Shchegrov
Publikováno v:
SPIE Proceedings.
We describe design and performance of novel, electrically pumped, vertical compound cavity semiconductor lasers emitting at 980 nm. The laser combines a vertical cavity semiconductor laser with a partially reflecting output coupler and an external ca
Autor:
Michael K. Liebman, Arvydas Umbrasas, John G. McInerney, Glen P. Carey, Dicky Lee, Vincent V. Doan, Aram Mooradian, Brad D. Cantos, Alan Lewis, Andrei V. Shchegrov, William R. Hitchens, Eva M. Strzelecka, David Heald, Jason P. Watson, Charles A. Amsden
Publikováno v:
SPIE Proceedings.
We have developed novel electrically pumped, surface-emitting lasers emitting at 980 nm with an extended coupled cavity. The concept is scalable from monolithic low power (~10 mW) devices all the way to high power extended cavity lasers. The latter h
Autor:
Charles A. Amsden, William R. Hitchens, Jason P. Watson, Eva M. Strzelecka, Glen P. Carey, Alan Lewis, Vincent V. Doan, J. L. Cannon, Dicky Lee, Andrei V. Shchegrov, Brad D. Cantos, Arvydas Umbrasas, Aram Mooradian, David Heald, John G. McInerney, Michael K. Liebman
Publikováno v:
SPIE Proceedings.
Autor:
John G. McInerney, Charles A. Amsden, William R. Hitchens, Michael K. Liebman, Eva M. Strzelecka, J. L. Cannon, Vincent V. Doan, Kevin L. Lear, David Heald, Dicky Lee, Glen P. Carey, Andrei V. Shchegrov, Brad D. Cantos, Jason P. Watson, Alan Lewis, Aram Mooradian, Arvydas Umbrasas
Publikováno v:
SPIE Proceedings.
We describe design, fabrication and performance of novel, electrically pumped, vertical compound cavity InGaAs lasers emitting at 980 and 920 nm. The concept is scalable and has been demonstrated using monolithic low power (~10 mW) devices all the wa
Autor:
Ronald D. Remba, Brad D. Cantos
Publikováno v:
SPIE Proceedings.
This paper describes an innovative photolithographic method for the fabrication of 1/4 micrometer gates in gallium arsenide Metal-Semiconductor Field Effect Transistors (GaAs MESFETs). The method utilizes image reversal technology, in which negative
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