Zobrazeno 1 - 10
of 508
pro vyhledávání: '"Bozhko S"'
Publikováno v:
Ultramicroscopy, vol. 267, 114053 (2024)
The main feature of vicinal surfaces of crystals characterized by the Miller indices (hhm) is rather small width (less than 10 nm) and substantially large length (more than 200 nm) of atomically-flat terraces on sample surface. This makes difficult t
Externí odkaz:
http://arxiv.org/abs/2406.08984
Autor:
Aladyshkin, A. Yu., Chaika, A. N., Semenov, V. N., Aladyshkina, A. S., Bozhko, S. I., Ionov, A. M.
Publikováno v:
Journal of Physical Chemistry C, vol. 128, 16143-16153 (2024)
Detailed analysis of scanning probe microscopy (SPM) data acquired for faceted and non-flat surfaces is usually complicated due to the presence of a large number of surface areas tilted by large/variable angles relative to the scanning plane. As a co
Externí odkaz:
http://arxiv.org/abs/2406.08436
Publikováno v:
Journal of Physical Chemistry C, vol. 125, 26814-26822 (2021)
Local electronic properties of quasi-two-dimensional Pb(111) islands with screw dislocations of different types on their surfaces were experimentally studied by means of low-temperature scanning tunneling microscopy and spectroscopy in the regime of
Externí odkaz:
http://arxiv.org/abs/2212.01868
Publikováno v:
JETP 130, 610 (2020)
We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sig
Externí odkaz:
http://arxiv.org/abs/2003.00690
Akademický článek
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Publikováno v:
JETP Lett., vol. 109, 789-796 (2019)
The spatial distribution of the differential conductance for ultrathin Pb films grown on Si(111)7x7 substrate is studied by means of low-temperature scanning tunneling microscopy and spectroscopy. The formation of the quantum--confined states for con
Externí odkaz:
http://arxiv.org/abs/1906.04487
Publikováno v:
In Materials Science & Engineering B April 2023 290
Autor:
Stolyarov, V. S., Remizov, S. V., Shapiro, D. S., Pons, S., Vlaic, S., Aubin, H., Baranov, D. S., Brun, Ch., Yashina, L. V., Bozhko, S. I., Cren, T., Pogosov, W. V., Roditchev, D.
Publikováno v:
Appl. Phys. Lett. 111, 251601 (2017)
The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging
Externí odkaz:
http://arxiv.org/abs/1712.00915
Publikováno v:
In Journal of Non-Crystalline Solids 1 February 2022 577
Akademický článek
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