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Akademický článek
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Publikováno v:
Phys. Rev. B 94, 045311 (2016)
It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with nearest neighbor interactions for arbitrarily strained group IV and III-V ma
Externí odkaz:
http://arxiv.org/abs/1603.05266
In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding parameters show good transferability when applied to strained bulk mate
Externí odkaz:
http://arxiv.org/abs/1504.06687
Publikováno v:
Phys. Rev. B 92, 085301 (2015)
Empirical tight binding(ETB) methods are widely used in atomistic device simulations. Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments or theoretical electronic bands. However, ETB calculations based on exi
Externí odkaz:
http://arxiv.org/abs/1503.04781
Autor:
Boykin, Timothy B.1 (AUTHOR) boykin@ece.uah.edu
Publikováno v:
Foundations of Physics. Jun2023, Vol. 53 Issue 3, p1-9. 9p.
Autor:
Boykin, Timothy B., Ajoy, Arvind, Ilatikhameneh, Hesameddin, Povolotskyi, Michael, Klimeck, Gerhard
Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure material, but problems arise when alloys are used. Specifically, only approx
Externí odkaz:
http://arxiv.org/abs/1407.4598
Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper an environment-a
Externí odkaz:
http://arxiv.org/abs/1311.6082
Autor:
Jiang, Xueping, Kharche, Neerav, Kohl, Paul, Boykin, Timothy B., Klimeck, Gerhard, Luisier, Mathieu, Ajayan, Pulickel M., Nayak, Saroj K.
Publikováno v:
Appl. Phys. Lett. 103 , 133107 (2013)
In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical
Externí odkaz:
http://arxiv.org/abs/1309.3226
Autor:
Tan, Yaohua, Povolotskyi, Michael, Kubis, Tillmann, He, Yu, Jiang, Zhengping, Klimeck, Gerhard, Boykin, Timothy B.
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters. The traditional way of obtaining the ETB parameters
Externí odkaz:
http://arxiv.org/abs/1210.8215
The effects of an atomistic interface roughness in n-type silicon nanowire transistors (SiNWT) on the radio frequency performance are analyzed. Interface roughness scattering (IRS) is statistically investigated through a three dimensional full-band q
Externí odkaz:
http://arxiv.org/abs/1111.3424