High-rate deposition of a-SiNx:H films for photovoltaic applications

Autor: Kessels, W.M.M., van Assche, F.J.H., Hong, J., Moschner, J.D., Lauinger, T., Schram, D.C., van de Sanden, M.C.M., Stutzmann, M., Boyce, J.B., Cohen, J.D., et al., xx

Publikováno v: Amorphous and heterogeneous silicon-based films-2001 : symposium held [at the 2001 MRS spring meeting,] April 16-20, 2001, San Francisco, California, U.S.A.

The feasibility of the new ‘Expanding Thermal Plasma’ technique for the deposition of a-SiNx:H at high deposition rates (typically ∼20Å/s) has been investigated. The structural film properties of the a-SiNx:H are reported for various process c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c308c0e3d628b47a8fa41b8d772a4a8
https://doi.org/10.1557/proc-664-a8.6

Multilayer ferroelectric-high T/sub c/ structures with poled ferroelectric layers.

Autor: Larkins, G.L., Avello, M.Y., Boyce, J.B., Fork, D.K.

Publikováno v: IEEE Transactions on Applied Superconductivity; 1995, Vol. 5 Issue 2, p3049-3052, 4p

High critical currents in Y-Ba-Cu-O films on silicon using YSZ buffer layers.

Autor: Fenner, D.B., Fork, D.K., Connell, G.A.N., Boyce, J.B., Viano, A.M., Geballe, T.H.

Publikováno v: IEEE Transactions on Magnetics; 1991, Vol. 27 Issue 2, p958-965, 8p

EXAFS investigation of mobile-ion density: Cul and Cu2Se contrasted

Autor: Boyce, J.B., Hayes, T.M., Mikkelsen, J.C.

Publikováno v: Solid State Ionics; October 1981, Vol. 5 Issue: 1 p497-500, 4p

Laser Processing of Polysilicon Thin-Film Transistors: Grain Growth and Device Fabrication

Autor: Boyce, J.B., Mei, P., Fulks, R.T., Ho, J.

Publikováno v: Physica Status Solidi (A) - Applications and Materials Science; April 1998, Vol. 166 Issue: 2 p729-741, 13p