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pro vyhledávání: '"Boyan Suo"'
Publikováno v:
Crystals, Vol 13, Iss 7, p 1145 (2023)
Nonpolar (112¯0) a-plane GaN films were grown on semipolar (11¯02) r-plane sapphire substrates using various buffer layers within a low-pressure metal organic chemical vapor deposition system. The structural properties of nonpolar a-plane GaN films
Externí odkaz:
https://doaj.org/article/0dbd068a22524492898cbf45461b76c6