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Experimental Evidence for a Coulomb Gap in Two Dimensions

Autor: Mason, Whitney, Kravchenko, S. V., Bowker, G. E., Furneaux, J. E.

We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our results s

Externí odkaz: http://arxiv.org/abs/cond-mat/9506006

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DESTRUCTION OF THE QUANTUM HALL EFFECT WITH INCREASING DISORDER

Autor: Furneaux, J. E., Kravchenko, S. V., Mason, Whitney, Bowker, G. E., Pudalov, V. M.

We report experimental studies of disorder-induced transitions between quantum-Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau level filling factor $\nu=1$.

Externí odkaz: http://arxiv.org/abs/cond-mat/9503140

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'Scaling of an anomalous metal/insulator transition in a 2D system in silicon at zero magnetic field'

Autor: Kravchenko, S. V., Mason, Whitney E., Bowker, G. E., Furneaux, J. E., Pudalov, V. M., D'Iorio, M.

We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically found to s

Externí odkaz: http://arxiv.org/abs/cond-mat/9412103

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