Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Bowen Sheng"'
Autor:
Hailing Jiang, Tao Wang, Zhenyu Zhang, Fang Liu, Ruochen Shi, Bowen Sheng, Shanshan Sheng, Weikun Ge, Ping Wang, Bo Shen, Bo Sun, Peng Gao, Lucas Lindsay, Xinqiang Wang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract Phonon engineering is crucial for thermal management in GaN-based power devices, where phonon-defect interactions limit performance. However, detecting nanoscale phonon transport constrained by III-nitride defects is challenging due to limit
Externí odkaz:
https://doaj.org/article/be6e7b4a35c843ff9c4edaf8e5f40224
Autor:
Jinglin Li, Bowen Sheng, Yiqing Chen, Jiajia Yang, Ping Wang, Yixin Li, Tianqi Yu, Hu Pan, Liang Qiu, Ying Li, Jun Song, Lei Zhu, Xinqiang Wang, Zhen Huang, Baowen Zhou
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Photo-thermal-coupling ammonia decomposition presents a promising strategy for utilizing the full-spectrum to address the H2 storage and transportation issues. Herein, we exhibit a photo-thermal-catalytic architecture by assembling gallium n
Externí odkaz:
https://doaj.org/article/1cd511437aaf4f219d1bef231e65e5ce
Autor:
Huapeng Liu, Bowen Sheng, Tao Wang, Konstantin Kudryavtsev, Artem Yablonskiy, Jiaqi Wei, Ali Imran, Zhaoying Chen, Ping Wang, Xiantong Zheng, Renchun Tao, Xuelin Yang, Fujun Xu, Weikun Ge, Bo Shen, Boris Andreev, Xinqiang Wang
Publikováno v:
Fundamental Research, Vol 2, Iss 5, Pp 794-798 (2022)
Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm−2 at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicina
Externí odkaz:
https://doaj.org/article/2a4f3f858077475d9903037aa6f108d2
Autor:
Jinglin Li, Bowen Sheng, Yiqing Chen, Sharif Md. Sadaf, Jiajia Yang, Ping Wang, Hu Pan, Tao Ma, Lei Zhu, Jun Song, He Lin, Xinqiang Wang, Zhen Huang, Baowen Zhou
Publikováno v:
Communications Chemistry, Vol 5, Iss 1, Pp 1-9 (2022)
Thermocatalytic hydrogenation holds great promise for commercial utilization of carbon dioxide, but the process is energy-intense with high temperature and pressure requirements. Here, the authors engineer a GaN1- x O x rhodium nanoparticle catalyst
Externí odkaz:
https://doaj.org/article/72c3e8182015472bb2cb048636e900b0
Autor:
Xiaofang Zhao, Tao Wang, Bowen Sheng, Xiantong Zheng, Li Chen, Haihui Liu, Chao He, Jun Xu, Rui Zhu, Xinqiang Wang
Publikováno v:
Nanomaterials, Vol 12, Iss 21, p 3719 (2022)
InGaN materials are widely used in optoelectronic devices due to their excellent optical properties. Since the emission wavelength of the full-composition-graded InxGa1−xN films perfectly matches the solar spectrum, providing a full-spectrum respon
Externí odkaz:
https://doaj.org/article/d6cb7bb896a446f3963f22a9245689a8
Publikováno v:
IEEE Access, Vol 7, Pp 69795-69807 (2019)
Bearing fault diagnosis is an important technique in industrial production as bearings are one of the key components in rotating machines. In bearing fault diagnosis, complex environmental noises will lead to inaccurate results. To address the proble
Externí odkaz:
https://doaj.org/article/b9c79235e6884cc6b68bf5399fdbed9e
Autor:
Fang Liu, Ye Yu, Yuantao Zhang, Xin Rong, Tao Wang, Xiantong Zheng, Bowen Sheng, Liuyun Yang, Jiaqi Wei, Xuepeng Wang, Xianbin Li, Xuelin Yang, Fujun Xu, Zhixin Qin, Zhaohui Zhang, Bo Shen, Xinqiang Wang
Publikováno v:
Advanced Science, Vol 7, Iss 21, Pp n/a-n/a (2020)
Abstract Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D
Externí odkaz:
https://doaj.org/article/4a730472eb854df6a9cba90baa971f29
Publikováno v:
IEEE Access, Vol 6, Pp 75629-75638 (2018)
Forecasting short-term traffic flow is one critical component in traffic management to improve operational efficiency. Data driven method, which trains the predictor with historical data across a given past period, have been proved to perform well. H
Externí odkaz:
https://doaj.org/article/eabe6939ad584df6a650d0975224821f
Autor:
Shibo Wang, Xinqiang Wang, Zhaoying Chen, Ping Wang, Qi Qi, Xiantong Zheng, Bowen Sheng, Huapeng Liu, Tao Wang, Xin Rong, Mo Li, Jian Zhang, Xuelin Yang, Fujun Xu, Bo Shen
Publikováno v:
Sensors, Vol 18, Iss 7, p 2065 (2018)
It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen
Externí odkaz:
https://doaj.org/article/da2c3b6ec29349a8abecd84a1c0adb3e
Autor:
Liuyun Yang, Jinlin Wang, Shanshan Sheng, Baoqing Zhang, Bowen Sheng, Tao Wang, Fang Liu, Renchun Tao, Fujun Xu, Xuelin Yang, Weikun Ge, Bo Shen, Xinqiang Wang
Publikováno v:
ACS Applied Electronic Materials. 4:3632-3639
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229f71060602aabb49e71366febe88de
https://doi.org/10.1021/acsaelm.2c00585
https://doi.org/10.1021/acsaelm.2c00585