Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Bouzazi, Boussairi"'
Autor:
Richard, Olivier, Jaouad, Abdelatif, Bouzazi, Boussairi, Arès, Richard, Fafard, Simon, Aimez, Vincent
Publikováno v:
In Solar Energy Materials and Solar Cells January 2016 144:173-180
Publikováno v:
In Current Applied Physics September 2013 13(7):1269-1274
Publikováno v:
In Journal of Alloys and Compounds 5 March 2013 552:469-474
Publikováno v:
In Solar Energy Materials and Solar Cells 2011 95(1):281-283
Publikováno v:
In Physica B: Physics of Condensed Matter 2011 406(5):1070-1075
Akademický článek
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Autor:
Darnon, Maxime, jaouad, abdelatif, de Lafontaine, Mathieu, Albert, Pierre, Colin, Clement, Bouzazi, Boussairi, Volatier, Maite, Fafard, Simon, Ares, Richard, Aimez, Vincent
Publikováno v:
Plasma Etch and Strip in Microtechnologies conference
Plasma Etch and Strip in Microtechnologies conference, May 2016, Grenoble, France
Plasma Etch and Strip in Microtechnologies conference, May 2016, Grenoble, France
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::30dcc85784d6475d6a19828fd6c9d592
https://hal.science/hal-02339970
https://hal.science/hal-02339970
Autor:
Darnon, Maxime, jaouad, abdelatif, de Lafontaine, Mathieu, Albert, Pierre, Colin, Clement, Bouzazi, Boussairi, Volatier, Maite, Fafard, Simon, Ares, Richard, Aimez, Vincent
Publikováno v:
CMOS Emerging Technologies Research
CMOS Emerging Technologies Research, May 2016, Montreal, Canada
CMOS Emerging Technologies Research, May 2016, Montreal, Canada
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f62102f80ab889ff2169972613f6076e
https://hal.science/hal-02339969
https://hal.science/hal-02339969
Autor:
Freundlich, Alexandre, Lombez, Laurent, Sugiyama, Masakazu, York, Mark, Proulx, Francine, Masson, Denis, jaouad, abdelatif, Bouzazi, Boussairi, Arès, Richard, Aimez, Vincent, Fafard, Simon
Publikováno v:
SPIE OPTO
SPIE OPTO, Feb 2016, San Francisco, United States. ⟨10.1117/12.2212960⟩
SPIE OPTO, Feb 2016, San Francisco, United States. ⟨10.1117/12.2212960⟩
PV devices with active areas of ~3:4 mm 2 were fabricated and tested with top electrodes having different emitter gridline spacings with active area shadowing values between 0% and 1.8%. As expected, the thicker n/p junctions exhibit hindered photoca
Autor:
Witzigmann, Bernd, Osiński, Marek, Arakawa, Yasuhiko, Bucsa, Ioan, Bouzazi, Boussairi, Lavoie, Patrick, Le Boulanger, Eric, Desfonds, Eric
Publikováno v:
Proceedings of SPIE; March 2021, Vol. 11680 Issue: 1 p116800R-116800R-11, 11563212p