Nonlinear characterization of microwave transistors by the means of pulsed I(V) and pulsed S-Parameters measurements

Autor: Teyssier, J.P., Barataud, D., Laloue, A., Bouysse, Ph., Quere, R

Publikováno v: Teyssier, J.P. ; Barataud, D. ; Laloue, A. ; Bouysse, Ph. ; Quere, R (1999) Nonlinear characterization of microwave transistors by the means of pulsed I(V) and pulsed S-Parameters measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

A versatile pulsed I(V) and 40 GHz pulsed S parameters measurement system of microwave transistors is described Capability of discrimination between thermal and trapping effects with a pulse set-up is demonstrated A method to measure electrically the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0dfce6c0d33b8f90a28f0d5e25254508

Optimization of Power Added Efficiency and Third Order Intermodulation in Solid State Power Amplifiers, using Data Processing Software Coupled to Single Tone Active Source and Load-Pull System. Extension to Class F Operation.

Autor: Bouysse, Ph., Nebus, J.M., Villotte, J.P., Aubourg, M.

Publikováno v: 1990 20th European Microwave Conference; 1990, Issue 2, p1228-1233, 6p

Characterising and modelling thermal behaviour of radio-frequency power LDMOS transistors.

Autor: Collantes, J.M., Bouysse, Ph., Quere, R.

Publikováno v: Electronics Letters (Institution of Engineering & Technology); 07/09/1998, Vol. 34 Issue 14, p1428-1430, 3p

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.