Contribution à la résolution des problèmes aux limites dans les dispositifs micro-ondes par la méthode des moindres carrés

Autor: Boussouis, Mohamed

Th.--Electronique--Toulouse--INPT, 1987.

Externí odkaz: http://catalogue.bnf.fr/ark:/12148/cb37603357w

Neuro-space mapping modeling approach for trapping and self-heating effects on GaAs and GaN devices.

Autor: Elhamadi, Taj‐eddin¹ tajeddinelhamadi@gmail.com, Boussouis, Mohamed¹, Touhami, Naima Amar¹, Lamsalli, Mohammed¹

Publikováno v: International Journal of RF & Microwave Computer-Aided Engineering. Aug2017, Vol. 27 Issue 6, pn/a-N.PAG. 10p. 4 Diagrams, 4 Charts, 14 Graphs.

Caracterización de diodos Schottky para banda W

Autor: Zeljami, Kaoutar, Gutiérrez Asueta, Jéssica, Pascual Gutiérrez, Juan Pablo, Fernández Ibáñez, Tomás, Tazón Puente, Antonio, Boussouis, Mohamed

Publikováno v: URSI 2012, XXVII Simposium Nacional de la Unión Científica Internacional de Radio, Elche
UCrea Repositorio Abierto de la Universidad de Cantabria
Universidad de Cantabria (UC)

In this paper, a comparison between two different techniques: low-frequency (1 MHz) and microwave frequency up to 10 GHz measurements, is presented in order to obtain the apparent capacitance of Single Anode Schottky Diodes fabricated by the Universi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f59b83b76570d15904c798c0b5840501
http://hdl.handle.net/10902/3216

Sistema de alimentación de antenas con dual polarización circular

Autor: Tribak, Abdelwahed, Cepero Llauger, Karen, Mediavilla Sánchez, Ángel, Boussouis, Mohamed, Chaibi, Mohamed, González Rodríguez, Óscar

Publikováno v: URSI 2010, XXV Simposium Nacional de la Unión Científica Internacional de Radio, Bilbao
UCrea Repositorio Abierto de la Universidad de Cantabria
Universidad de Cantabria (UC)

A dual circular polarization feed antenna system for satellite communication is described. It consists of a septum OMT-Polarizer type, and two identical duplexers formed by a plane T-junction and of two iris filters, along with two electric field rot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::caec7347d97085fade76741ea6bf103e
http://hdl.handle.net/10902/3119

Estudio y caracterización del efecto kink en transistores HEMT de GaN

Autor: Mimouni, Asmae, Fernández Ibáñez, Tomás, Tazón Puente, Antonio, Sánchez Sanz, Fernando, Verdú Herce, Marina, Boussouis, Mohamed

Publikováno v: URSI 2010, XXV Simposium Nacional de la Unión Científica Internacional de Radio, Bilbao
UCrea Repositorio Abierto de la Universidad de Cantabria
Universidad de Cantabria (UC)

Using as test vehicles virgin and aged GaN HEMT devices, a study of the kink effect evolution with the applied electric field and ambient temperature has been performed. The obtained results lead to a physics explanation of the kink effect origin as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b2b685a75e35e8b10151e02861774eea
http://hdl.handle.net/10902/3113