Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Boumediene Zatout"'
Autor:
Boumediene Zatout, Djabar Maafri, Abdelkader Taibi, Yasmina Belaroussi, Salim Kerai, Mohamad Al Sabbagh, Mustapha C. E. Yagoub
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31fe68213669791e30cd433b0417c6d3
https://doi.org/10.1002/jnm.3117
https://doi.org/10.1002/jnm.3117
Publikováno v:
2022 2nd International Conference on Advanced Electrical Engineering (ICAEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7484e83d36b1c5209dfd39b49cbf1148
https://doi.org/10.1109/icaee53772.2022.9962089
https://doi.org/10.1109/icaee53772.2022.9962089
Autor:
Boualem Djezzar, Mohamed Boubaaya, Abdelkader Zitouni, Abdelmadjid Benabdelmoumene, Dhiaelhak Messaoud, Boumediene Zatout
Publikováno v:
Algerian Journal of Signals and Systems. 6:24-31
To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d1cd199acffdb31fefcef8abd156a7
https://doi.org/10.51485/ajss.v6i1.3
https://doi.org/10.51485/ajss.v6i1.3
Autor:
Walid Filali, Fouaz Lekoui, Boumediene Zatout, Laid Henni, Sidali Abdelmoumene, Elyes Garoudja, Rachid Amrani, Slimane Oussalah
Publikováno v:
2022 19th International Multi-Conference on Systems, Signals & Devices (SSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c33823a15d3ef9182aa9bee1aa1d1ae1
https://doi.org/10.1109/ssd54932.2022.9955954
https://doi.org/10.1109/ssd54932.2022.9955954
Autor:
Slimane Oussalah, Walid Filali, Elyes Garoudja, Boumediene Zatout, Fouaz Lekoui, Rachid Amrani, Noureddine Sengouga, Mohamed Henini
The temperature effect on the electrical characteristics of Au/Ti on Beryllium-doped Al0.29Ga0.71As Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy has been investigated for various temperatures ranging from 260 to 400 K. By
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c9963f926ab0a5f268ad84d342c507b
Autor:
Abdelmadjid Benabdelmoumene, Boualem Djezzar, Amel Chenouf, Mohamed Kechouane, Boumediene Zatout
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 18:583-591
This paper presents a new attempt to further understand negative bias temperature instability (NBTI) stress in semiconductor devices. NBTI impact has been experimentally investigated on both p-substrate MOS (nMOS-capacitor) and nMOS transistors under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::492acd559d50e1740bede296eaff17b5
https://doi.org/10.1109/tdmr.2018.2874359
https://doi.org/10.1109/tdmr.2018.2874359
Autor:
Abdelmadjid Benabdelmoumene, Boualem Djezzar, Mohamed Kechouane, Amel Chenouf, Boumediene Zatout, Hakim Tahi
Publikováno v:
Solid-State Electronics. 121:34-40
We have experimentally analyzed negative bias temperature instability (NBTI) stress/recovery cycle on n-channel metal oxide semiconductor field effect transistors (n-MOSFET’s). Data obtained by current–voltage (I–V) and charge pumping (CP) tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::801711b4ddfea58777bb4fa61295ec97
https://doi.org/10.1016/j.sse.2016.04.001
https://doi.org/10.1016/j.sse.2016.04.001
Autor:
Abdelmadjid Benabdelmoumene, Boualem Djezzar, Dhiaelhak Messaoud, Mohamed Boubaaya, Boumediene Zatout, Hakima Timlelt, Amel Chenouf, Hakim Tahi
Publikováno v:
Microelectronics Reliability. 110:113703
Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to reveal the existence of turn around phenomenon during stress phase. At
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca28dbaa3e7a60eff26a65a05899ce6
https://doi.org/10.1016/j.microrel.2020.113703
https://doi.org/10.1016/j.microrel.2020.113703