Zobrazeno 1 - 10
of 263
pro vyhledávání: '"Bougerol Catherine"'
Autor:
Grenier Adeline, Canaz Jesus, Rochat Névine, Saghi Zineb, Rouvière Jean-Luc, Bellet-Almaric Edith, Jannaud Audrey, Harikumar Anjali, Bougerol Catherine, Rigutti Lorenzo, Monroy Eva
Publikováno v:
BIO Web of Conferences, Vol 129, p 32002 (2024)
Externí odkaz:
https://doaj.org/article/807f3ad6a56142c7b97dac78f3803bcf
Autor:
Cañas, Jesus, Rochat, Névine, Grenier, Adeline, Jannaud, Audrey, Saghi, Zineb, Rouviere, Jean-Luc, Bellet-Amalric, Edith, Harikumar, Anjali, Bougerol, Catherine, Rigutti, Lorenzo, Monroy, Eva
We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defec
Externí odkaz:
http://arxiv.org/abs/2310.04201
Autor:
Cuesta, Sergi, Curé, Yoann, Donatini, Fabrice, Denaix, Lou, Bellet-Amalric, Edith, Bougerol, Catherine, Grenier, Vincent, Thai, Quang-Minh, Nogues, Gilles, Purcell, Stephen T., Dang, Le Si, Monroy, Eva
We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the resu
Externí odkaz:
http://arxiv.org/abs/2101.01954
Publikováno v:
Semicond. Sci. Technol. 32, 125002 (2017)
This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared ranges (SWI
Externí odkaz:
http://arxiv.org/abs/1903.09375
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Machhadani, Houssaine, Zichi, Julien, Bougerol, Catherine, Lequien, Stéphane, Thomassin, Jean-Luc, Mollard, Nicolas, Mukhtarova, Anna, Zwiller, Val, Gérard, Jean-Michel, Monroy, Eva
Publikováno v:
Supercond. Sci. Technol. 32 (2019) 035008
In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully rela
Externí odkaz:
http://arxiv.org/abs/1810.04070
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Elwaradi, Reda, Mehta, Jash, Ngo, Thi Huong, Nemoz, Maud, Bougerol, Catherine, Medjdoub, Farid, Cordier, Yvon
Publikováno v:
Journal of Applied Physics; 4/14/2023, Vol. 133 Issue 14, p1-12, 12p
Autor:
Artioli, Alberto, Rueda-Fonseca, Pamela, Stepanov, Petr, Bellet-Amalric, Edith, Hertog, Martien Den, Bougerol, Catherine, Genuist, Yann, Donatini, Fabrice, André, Régis, Nogues, Gilles, Kheng, Kuntheak, Tatarenko, Serge, Ferrand, David, Cibert, Joel
Publikováno v:
Applied Physics Letters 103, 22 (2013) 222106
Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The cry
Externí odkaz:
http://arxiv.org/abs/1306.2858
Autor:
Hertog, Martien Den, Elouneg-Jamroz, Miryam, Bellet-Amalric, Edith, Bounouar, Samir, Bougerol, Catherine, André, Régis, Genuist, Yann, Poizat, Jean Philippe, Kheng, Kuntheak, Tatarenko, Serge
Publikováno v:
Journal of Crystal Growth 323 (2010) 330-333
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic
Externí odkaz:
http://arxiv.org/abs/1207.7135