Zobrazeno 1 - 10
of 508
pro vyhledávání: '"Bougerol C"'
Autor:
Bougerol, C., Robin, E., Di Russo, E., Bellet-Amalric, E., Grenier, V., Ajay, A., Rigutti, L., Monroy, E.
Publikováno v:
ACS Appl. Mater. Interfaces 2021, 13, 4165-4173
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Ge-doped AlGaN samples with Al mole fraction from x=0 to 1, a
Externí odkaz:
http://arxiv.org/abs/2010.13577
Autor:
Harikumar, A., Donatini, F., Bougerol, C., Bellet-Amalric, E., Thai, Q. -M., Dujardin, C., Dimkou, I., Purcell, S. T., Monroy, E.
Publikováno v:
Nanotechnology 31(50), 505205 (2020)
In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet lamps. Highl
Externí odkaz:
http://arxiv.org/abs/2005.14486
The propagation of sidewall steps during the growth of nanowires is calculated in the frame of the Burton-Cabrera-Frank model. The stable shape of the nanowire comprises a cylinder section on top of a cone section: their characteristics are obtained
Externí odkaz:
http://arxiv.org/abs/2002.12832
Autor:
Dimkou, I., Harikumar, A., Donatini, F., Lähnemann, J., Hertog, M. I. den, Bougerol, C., Bellet-Amalric, E., Mollard, N., Ajay, A., Ledoux, G., Purcell, S. T., Monroy, E.
Publikováno v:
Nanotechnology 31, 204001 (2020)
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources. The optical
Externí odkaz:
http://arxiv.org/abs/1911.13133
Autor:
Blasco, R., Ajay, A., Robin, E., Bougerol, C., Lorentz, K., Alves, L. C., Mouton, I., Amichi, L., Grenier, A., Monroy, E.
Publikováno v:
R Blasco et al 2019 J. Phys. D: Appl. Phys. 52 125101
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering
Externí odkaz:
http://arxiv.org/abs/1810.11108
Autor:
Ajay, A., Schörmann, J., Jimenez-Rodriguez, M., Lim, C. B., Walther, F., Rohnke, M., Mouton, I., Amichi, L., Bougerol, C., Hertog, M. I. Den, Eickhoff, M., Monroy, E.
Publikováno v:
Journal of Physics D: Applied Physics 49, 445301 (2016)
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and free carrier
Externí odkaz:
http://arxiv.org/abs/1604.00231
Autor:
Redaelli, L., Mukhtarova, A., Valdueza-Felip, S., Ajay, A., Bougerol, C., Himwas, C., Faure-Vincent, J., Durand, C., Eymery, J., Monroy, E.
Publikováno v:
Appl. Phys. Lett. 105, 131105 (2014)
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the we
Externí odkaz:
http://arxiv.org/abs/1602.07227
Autor:
Lim, C. B., Ajay, A., Bougerol, C., Haas, B., Schörmann, J., Beeler, M., Lähnemann, J., Eickhoff, M., Monroy, E.
Publikováno v:
Nanotechnology 26, 435201 (2015)
This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two confined elect
Externí odkaz:
http://arxiv.org/abs/1506.00353
Autor:
Lim, C. B., Beeler, M., Ajay, A., Lähnemann, J., Bellet-Amalric, E., Bougerol, C., Monroy, E.
Publikováno v:
J. Appl. Phys. 118, 014309 (2015)
This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for reference samples
Externí odkaz:
http://arxiv.org/abs/1504.04989
Evidence for High Tc cuprate superconductivity is found in a region of the phase diagram where non-superconducting Fermi liquid metals are expected. Cu valences estimated independently from both x-ray absorption near-edge structure (XANES) and bond v
Externí odkaz:
http://arxiv.org/abs/1207.4239