Zobrazeno 1 - 10 of 61 pro vyhledávání: '"Boudinov, Henri Ivanov"'
1
Akademický článek
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Akademický článek
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3
Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC
Autor: Pitthan Filho, Eduardo, Reis, Roberto dos, Corrêa, Silma Alberton, Schmeisser, Dieter, Boudinov, Henri Ivanov, Stedile, Fernanda Chiarello
Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::9422eab2435bc0a27347b6e72d15d106
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4
Akademický článek
Combining GeO2 passivation strategies aiming at dielectric layers with superior properties on germanium substrates.
Autor: Etcheverry, Louise Patron, Boudinov, Henri Ivanov, Vieira Soares, Gabriel, Radtke, Cláudio
Publikováno v: Journal of Materials Chemistry C; 7/21/2019, Vol. 7 Issue 27, p8465-8470, 6p
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5
SiO2/SiC structures annealed in D2 18O : compositional and electrical effects
Autor: Pitthan Filho, Eduardo, Corrêa, Silma Alberton, Boudinov, Henri Ivanov, Stedile, Fernanda Chiarello
Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films depos
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6
Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
Autor: Pitthan Filho, Eduardo, Lopes, L. D., Palmieri, Rodrigo, Corrêa, Silma Alberton, Soares, Gabriel Vieira, Boudinov, Henri Ivanov, Stedile, Fernanda Chiarello
Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were correlated to those from ele
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::5260324f3745bc61855f9ab66e9f8829
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9
Ion beam synthesis of cubic-SiC layer on Si(111) substrate
Autor: Maltez, Rogério Luis, Oliveira, Roana Melina de, Reis, Roberto Moreno Souza dos, Boudinov, Henri Ivanov
Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
We have investigated SiC layers produced by ion beam synthesis on Si (111) substrates using different procedures. Bare Si (111) and SiO2/Si (111) structures were implanted with carbon at 40 keV up to a fluence of 4 1017 cm-² at a temperature of 600
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::486808c51107c9bdaee909dcd35974a4
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10
Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation
Autor: Souza, Joel Pereira de, Cima, Carlos Alberto, Fichtner, Paulo Fernando Papaleo, Boudinov, Henri Ivanov
Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
In this paper we discuss the structural modifications observed in a buried amorphous Si (α-Si) layer containing high oxygen concentration level (up to ~ 3 at.%) after being implanted at elevated temperature with 16O+ ions. For implants conducted at
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