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Laser doping for ohmic contacts in n-type Ge

Autor: Chiodi, F., Chepelianskii, A. D., Gardes, C., Hallais, G., Bouchier, D., Débarre, D.

We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser doping technique used, Gas Immersion Laser Doping, we could attai

Externí odkaz: http://arxiv.org/abs/1411.4325

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Growth Route Toward III-V Multispectral Solar Cells on Silicon

Autor: Renard, C., Cherkashin, N., Jaffré, A., Molière, T., Vincent, L., Michel, A., Alvarez, J., Connolly, J. P., Kleider, J. -P., Mencaraglia, D., Bouchier, D.

To date, high efficiency multijunction solar cells have been developed on Ge or GaAs substrates for space applications, and terrestrial applications are hampered by high fabrication costs. In order to reduce this cost, we propose a breakthrough techn

Externí odkaz: http://arxiv.org/abs/1312.3570

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Designing III-V Multijunction Solar Cells on Silicon

Autor: Connolly, J. P., Mencaraglia, D., Renard, C., Bouchier, D.

Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits. This paper presents ideal limiting efficiencies for tandem and triple junction multijunction solar cells subject only to the constraint of the Si bandgap

Externí odkaz: http://arxiv.org/abs/1312.2908

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