Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Boualem Djezzar"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:2181-2188
In part I, we have proposed a new capacitance–voltage technique ${C}$ ( ${V}$ ), which is simultaneously based on external ac magnetic field for surface potential modulation and on dc voltage to sweep the gate voltage. In part II, we describe the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe36c7e305eb4c419d6eb4aca15cb637
https://doi.org/10.1109/ted.2021.3067634
https://doi.org/10.1109/ted.2021.3067634
Publikováno v:
IEEE Transactions on Electron Devices. 68:2173-2180
In this article, we report a new capacitance–voltage technique ${C}$ ( ${V}$ ) to investigate the interface proprieties of MOS devices. This technique is based on surface potential modulation using time varying (ac) magnetic field. It is experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109ceace18a9fa068c0e5a46e4f6f052
https://doi.org/10.1109/ted.2021.3067587
https://doi.org/10.1109/ted.2021.3067587
Autor:
Boualem Djezzar, Mohamed Boubaaya, Abdelkader Zitouni, Abdelmadjid Benabdelmoumene, Dhiaelhak Messaoud, Boumediene Zatout
Publikováno v:
Algerian Journal of Signals and Systems. 6:24-31
To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d1cd199acffdb31fefcef8abd156a7
https://doi.org/10.51485/ajss.v6i1.3
https://doi.org/10.51485/ajss.v6i1.3
Autor:
Boualem Djezzar, Ali HOUADEF
Publikováno v:
Algerian Journal of Signals and Systems. 6:16-23
Hot carrier stress is evaluated on a laterally diffused MOSFET (LDMOS) by TCAD simulation. The device under test is obtained from process simulation under a 1µm CMOS flow available at CDTA. The n-type transistor uses the LOCOS (local oxidation of si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdec136f95a80ae64167531186d6eb8
https://doi.org/10.51485/ajss.v6i1.2
https://doi.org/10.51485/ajss.v6i1.2
Autor:
Alessio Spessot, Mohamed Boubaaya, Pierre C. Fazan, Barry O'Sullivan, E. Dupuy, J. Franco, V. Machkaoutsan, A. Ferhat Hamida, Eugenio Dentoni Litta, Cheolgyu Kim, Djamila Bennaceur-Doumaz, Romain Ritzenthaler, D. Linten, Boualem Djezzar, Naoto Horiguchi
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:269-277
Fin height and width dependence of negative and positive Bias Temperature Instability (N/PBTI) on logic for memory high- $\kappa $ metal gate (HKMG) FinFET transistors is reported for the first time. It was observed that NBTI degradation is less seve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b9225c0e4647b3efb5db546e6283327
https://doi.org/10.1109/tdmr.2020.2984957
https://doi.org/10.1109/tdmr.2020.2984957
Publikováno v:
IET Circuits, Devices & Systems. 14:555-561
This study presents a negative bias temperature instability (NBTI) mitigation design technique for CMOS 6T-static random access memory (6T-SRAM) cells. The proposed approach is based on transistor sizing technique. It consists of sizing the nMOS acce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85f696bc1ec6cd591b62c62278292800
https://doi.org/10.1049/iet-cds.2019.0307
https://doi.org/10.1049/iet-cds.2019.0307
Autor:
Boualem Djezzar, Ali HOUADEF
Publikováno v:
ICCEIS 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b38639a60ece1a919ecf9350f55e1c4f
https://doi.org/10.3390/engproc2022014017
https://doi.org/10.3390/engproc2022014017
Autor:
Boualem Djezzar, Ali HOUADEF
Publikováno v:
ICCEIS 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ef0139d15242bcf9f111829ab94b86
https://doi.org/10.3390/engproc2022014016
https://doi.org/10.3390/engproc2022014016
Autor:
A. Houadef, Boualem Djezzar
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
This work investigates by TCAD simulation the impact of hot carrier degradation (HCD) in an nLDMOS that uses many topological features. The trenched gate and the triple-RESURF used to optimally reduce the device on-resistance $(R_{ON})$ , triggers DC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36109d6951cdf83dabe5afe6f2110934
https://doi.org/10.1109/miel52794.2021.9569100
https://doi.org/10.1109/miel52794.2021.9569100
Autor:
Ali Houadef, Boualem Djezzar
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3469b9afafd8f75ca32c88cf8d7dec1d
https://doi.org/10.1002/mmce.22755
https://doi.org/10.1002/mmce.22755