Zobrazeno 1 - 10
of 173
pro vyhledávání: '"Bottegoni, F."'
Autor:
Guillet, T., Zucchetti, C., Marchionni, A., Hallal, A., Biagioni, P., Vergnaud, C., Marty, A., Finazzi, M., Ciccacci, F., Chshiev, M., Bottegoni, F., Jamet, M.
Publikováno v:
Phys. Rev. B 101, 184406 (2020)
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to t
Externí odkaz:
http://arxiv.org/abs/1911.10611
Autor:
Wang, Z., Molina-Sanchez, A., Altmann, P., Sangalli, D., De Fazio, D., Soavi, G., Sassi, U., Bottegoni, F., Ciccacci, F., Finazzi, M., Wirtz, L., Ferrari, A. C., Marini, A., Cerullo, G., Conte, S. Dal
In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark exciton
Externí odkaz:
http://arxiv.org/abs/1805.06259
Autor:
Zucchetti, C., Dau, M. -T, Bottegoni, F., Vergnaud, C., Guillet, T., Marty, A., Beigné, C., Gambarelli, S., Picone, A., Calloni, A., Bussetti, G., Brambilla, A., Duò, L., Ciccacci, F., Das, P. K., Fujii, J., Vobornik, I., Finazzi, M., Jamet, M.
Publikováno v:
Phys. Rev. B 98, 184418 (2018)
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conver
Externí odkaz:
http://arxiv.org/abs/1805.01841
Autor:
Zucchetti, C., Scali, F., Ballabio, A., Bollani, M., Isella, G., Ferrari, G., Finazzi, M., Ciccacci, F., Bottegoni, F.
Publikováno v:
Applied Physics Letters; 10/21/2024, Vol. 125 Issue 17, p1-6, 6p
Autor:
Conte, S. Dal, Bottegoni, F., Pogna, E. A. A., Ambrogio, S., Bargigia, I., D'Andrea, C., De Fazio, D., Lombardo, A., Bruna, M., Ciccacci, F., Ferrari, A. C., Cerullo, G., Finazzi, M.
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers of transiti
Externí odkaz:
http://arxiv.org/abs/1502.06817
Autor:
Bottegoni, F., Celebrano, M., Bollani, M., Biagioni, P., Isella, G., Ciccacci, F., Finazzi, M.
Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be powered by
Externí odkaz:
http://arxiv.org/abs/1404.0278
Autor:
Pezzoli, F., Bottegoni, F., Trivedi, D., Ciccacci, F., Giorgioni, A., Li, P., Cecchi, S., Grilli, E., Song, Y., Guzzi, M., Dery, H., Isella, G.
Publikováno v:
Phys. Rev. Lett. 108, 156603 (2012)
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the
Externí odkaz:
http://arxiv.org/abs/1111.5209
Akademický článek
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Autor:
Goto, F., Calloni, A., Albani, G., Picone, A., Brambilla, A., Zucchetti, C., Bottegoni, F., Finazzi, M., Duò, L., Ciccacci, F., Bussetti, G.
Publikováno v:
Journal of Applied Physics; 4/21/2021, Vol. 129 Issue 15, p1-8, 8p
Akademický článek
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