Noise diagnostics of graphene interconnects for atomic-scale electronics

Autor: László Pósa, Zoltán Balogh, Dávid Krisztián, Péter Balázs, Botond Sánta, Roman Furrer, Miklós Csontos, András Halbritter

Publikováno v: npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)

Abstract Graphene nanogaps are considered as essential building blocks of two-dimensional electronic circuits, as they offer the possibility to interconnect a broad range of atomic-scale objects. Here we provide an insight into the microscopic proces

Externí odkaz: https://doaj.org/article/e5cefa9a947d4a70bde4bfa82450cec2

Noise diagnostics of graphene interconnects for atomic-scale electronics

Autor: Zoltán Balogh, László Pósa, Botond Sánta, M. Csontos, Péter Balázs, Roman Furrer, András Halbritter, Dávid Krisztián

Publikováno v: npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
npj 2D Materials and Applications, 5 (1)

Graphene nanogaps are considered as essential building blocks of two-dimensional electronic circuits, as they offer the possibility to interconnect a broad range of atomic-scale objects. Here we provide an insight into the microscopic processes takin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7fffda73cc59725a0fbdce95484bd2f
https://doi.org/10.1038/s41699-021-00237-w

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

Autor: M. Csontos, Dániel Molnár, Botond Sánta, Edit Szilágyi, Zsolt Zolnai, András Halbritter, Agnes Gubicza, Patrick Haiber

Publikováno v: Beilstein Journal of Nanotechnology, 11
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 92-100 (2020)

Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high op

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c2b6536afa196a32971020c341941b0
https://hdl.handle.net/20.500.11850/581353

Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

Autor: M. Csontos, György Mihály, Botond Sánta, Dávid Krisztián, Agnes Gubicza, Zoltán Balogh, László Pósa, András Halbritter

Publikováno v: Nanoscale. 11(11)

The microscopic origins and technological impact of 1/f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. The analysis of the low-frequ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e90392278494df83e7ee19ca8d30849b
https://pubmed.ncbi.nlm.nih.gov/30839979

In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation

Autor: Botond Sánta, Tímea Nóra Török, Roland Hauert, M. Csontos, Dániel Molnár, Agnes Gubicza, András Magyarkuti, Gabor Kiss, András Halbritter

Publikováno v: Nanoscale, 10 (41)

The dynamical aspects of bipolar resistive switchings have been investigated in Nb/Nb2O5/PtIr nanojunctions. We found that the widely tuneable ON and OFF state resistances are well separated at low bias. On the other hand, the high-bias regime of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::127eecd8b796a1e17d7f93bb09dc9ac1