Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Botchkarev, A.E"'
Autor:
Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Botchkarev, A.E, Nelson, N.N, Fahmi, M.M.E, Griffin, J.A, Khan, A, Noor Mohammad, S, Johnstone, D.K, Bublik, V.T, Chsherbatchev, K.D, Voronova, M.I, Kasatochkin, V.S
Publikováno v:
In Solid State Electronics 2002 46(12):2147-2153
Autor:
Kim, Wook, Botchkarev, A.E.
Publikováno v:
Journal of Applied Physics; 7/1/1997, Vol. 82 Issue 1, p219, 8p, 1 Chart, 6 Graphs
Autor:
Park, D.G., Tao, M., Reed, J., Suzue, K., Botchkarev, A.E., Fan, Z., Gao, G.B., Chey, S.J., Nostrand, J. Van, Cahill, D.G., Morko, H.
Publikováno v:
Journal of Crystal Growth; 19950501, Vol. 150 Issue: 0 p1275-1280, 6p
Autor:
Xu, G., Salvador, A., Botchkarev, A.E., Kim, W., Lu, C., Tang, H., Morkoç, Hadis, Smith, G., Estes, M., Dang, T., Wolf, P.
Publikováno v:
Materials Science Forum; February 1998, Vol. 264 Issue: 1 p1441-1444, 4p
Autor:
Calcagnile, L., Coli, G., Rinaldi, D., Cingolani, R., Tang, H., Botchkarev, A.E., Kim, W., Salvador, A., Morkoç, Hadis
Publikováno v:
Materials Science Forum; February 1998, Vol. 264 Issue: 1 p1433-1436, 4p
Autor:
Cingolani, R., Coli, G., Rinaldi, R., Calcagnile, L., Tang, H., Botchkarev, A.E., Kim, W., Salvador, A., Morkoç, Hadis
Publikováno v:
Materials Science Forum; February 1998, Vol. 264 Issue: 1 p1303-1306, 4p
Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy
Autor:
Hamdani, F., Yeadon, M., Smith, David J., Tang, H., Kim, W., Salvador, A., Botchkarev, A.E., Gibson, J. Murray, Morkoç, Hadis
Publikováno v:
Materials Science Forum; February 1998, Vol. 264 Issue: 1 p1201-1204, 4p
Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of....
Autor:
Hamdani, F., Botchkarev, A.E.
Publikováno v:
Applied Physics Letters; 11/24/1997, Vol. 71 Issue 21, p3111, 3p, 4 Graphs
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 09/01/1994, Vol. 30 Issue 18, p1527-1529, 3p
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 05/27/1993, Vol. 29 Issue 11, p1019-1021, 3p