Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Bosul Kim"'
Publikováno v:
Thin Solid Films. 520:3796-3799
Thermally induced instability of amorphous Si–In–Zn–O (SIZO) with 1 wt.% silicon (Si) concentration and Ga–In–Zn–O (GIZO) with gallium (Ga) of 30 wt.% thin film transistors (TFTs) has been investigated, by comparing the density of states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30ec8935eba7d33d54f40eccc9d66d84
https://doi.org/10.1016/j.tsf.2011.10.058
https://doi.org/10.1016/j.tsf.2011.10.058
Autor:
Ki-Ho Park, Eugene Chong, Jun Young Choi, Sang Yeol Lee, Eun-Ah Cho, Dong-Youn You, Gun-Eik Jang, Bosul Kim
Publikováno v:
Microelectronic Engineering. 91:50-53
We report on the temperature dependence phenomena in stability and trap related parameters in amorphous-hafnium-indium-zinc-oxide (a-HIZO) thin film transistors (TFTs) with different Hf-ratio. The optimized 7HIZO TFT shows large @m"F"E of >11.1cm^2/V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6ce88240ad1c9fc5c78f6ebc75b1d47
https://doi.org/10.1016/j.mee.2011.10.006
https://doi.org/10.1016/j.mee.2011.10.006
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 24:693-696
Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db39588e542c83684188d257255140af
https://doi.org/10.4313/jkem.2011.24.9.693
https://doi.org/10.4313/jkem.2011.24.9.693
Publikováno v:
Journal of Nanoscience and Nanotechnology. 10:3254-3259
Interfacial microstructure and elemental diffusion of Cu-doped indium oxide (CIO)/indium tin oxide (ITO) ohmic contacts to p-type GaN for light-emitting diodes (LEDs) were investigated using cross-sectional transmission electron microscopy (XTEM), X-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7c52a5a688527fe638a59079026b515
https://doi.org/10.1166/jnn.2010.2280
https://doi.org/10.1166/jnn.2010.2280
Publikováno v:
Electronic Materials Letters. 9:467-469
A transparent non-volatile memory device was fabricated using silicon quantum dots in silicon nitride film as a gate insulator. A silicon quantum dots were grown in-situ in the film by plasma-enhanced chemical vapor deposition. The silicon quantum do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd5c48ba3d59360cf3e329ab2b1d529d
https://doi.org/10.1007/s13391-013-0028-y
https://doi.org/10.1007/s13391-013-0028-y
Autor:
Chan-Hwa Hong, Jae-Heon Shin, Kyung Hyun Kim, Nae-Man Park, Bosul Kim, Dong-Ho Kang, Sun-Young Ryou, Byeong-Kwon Ju, Woo-Seok Cheong
Publikováno v:
ECS Meeting Abstracts. :36-36
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70be0a786e54dcb734a1f7828cf7a483
https://doi.org/10.1149/ma2013-01/2/36
https://doi.org/10.1149/ma2013-01/2/36
Autor:
Sang Jik Kwon, Sang-Hun Song, Eou-Sik Cho, Jong-Ho Lee, In-Tak Cho, Hyuck-In Kwon, Woo-Seok Cheong, Chan-Yong Jeong, Ick-Joon Park, Bosul Kim
Publikováno v:
Semiconductor Science and Technology. 27:105019
In this work, we present the results concerning the use of amorphous indium‐ gallium‐zinc‐oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin sys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca720f2fb0c8b23d1506682b321023aa
https://doi.org/10.1088/0268-1242/27/10/105019
https://doi.org/10.1088/0268-1242/27/10/105019
Publikováno v:
ECS Meeting Abstracts. :3085-3085
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4d17629e94143f3e537f20c67c5aca
https://doi.org/10.1149/ma2012-02/42/3085
https://doi.org/10.1149/ma2012-02/42/3085
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 34:012005
A silicon-indium-zinc-oxide (SIZO) thin film transistor (TFT) with low channel-resistance (RCH) indium-zinc-oxide (In2O3:ZnO = 9:1) buried layer annealed at low temperature of 200°C exhibited high field-effect mobility (μFE) over 55.8 cm2/V·s whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e84a4790a754f73759f6fac8be6628a
https://doi.org/10.1088/1757-899x/34/1/012005
https://doi.org/10.1088/1757-899x/34/1/012005
Publikováno v:
Applied Physics Letters. 99:062108
Effect of trap-density of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were studied using different analysis of x-ray photoelectron spectroscopy (XPS) depth profile and density of states (DOSs). To change trap-densities systematically, rf-po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38b6118e2ca5236864e7c35057818330
https://doi.org/10.1063/1.3615304
https://doi.org/10.1063/1.3615304