Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Bose, Sumanta"'
In this paper, we used the 8-band k$\cdot$p model with valence force field considerations to investigate the effect of size and shape on electronic and optical properties of cadmium selenide quantum dots. Major factors related to their properties inc
Externí odkaz:
http://arxiv.org/abs/1711.02527
Autor:
Bose, Sumanta, Delikanli, Savas, Yeltik, Aydan, Sharma, Manoj, Erdem, Onur, Dang, Cuong, Fan, Weijun, Zhang, Dao Hua, Demir, Hilmi Volkan
Publikováno v:
S. Bose, S. Delikanli, A. Yeltik, M. Sharma, O. Erdem, C. Dang, W. Fan, D. H. Zhang, and H. V. Demir, in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optical Society of America, 2017), paper SM1K.2
We demonstrate high quantum yield broad photoluminescence emission of ultrathin sub-nanometer CdSe nanoplatelets (two-monolayer). They also exhibit polarization-characterized lateral size dependent anomalous heavy hole and light/split-off hole absorp
Externí odkaz:
http://arxiv.org/abs/1802.01470
Temperature-dependent Optoelectronic Properties of Quasi-2D Colloidal Cadmium Selenide Nanoplatelets
Autor:
Bose, Sumanta, Shendre, Sushant, Song, Zhigang, Sharma, Vijay Kumar, Zhang, Dao Hua, Dang, Cuong, Fan, Weijun, Demir, Hilmi Volkan
Publikováno v:
Sumanta Bose et al., Nanoscale, 2017,9, 6595-6605
Colloidal Cadmium Selenide (CdSe) nanoplatelets (NPLs) are a recently developed class of efficient luminescent nanomaterial suitable for optoelectronic device applications. A change in temperature greatly affects their electronic bandstructure and lu
Externí odkaz:
http://arxiv.org/abs/1710.09260
Publikováno v:
Sumanta Bose, Weijun Fan, Dao Hua Zhang, Journal of Applied Physics 122, 163102 (2017)
Inverted type-I heterostructure core/crown quantum rings (QRs) are quantum-efficient luminophores, whose spectral characteristics are highly tunable. Here, we study the optoelectronic properties of type-I core/crown CdS/CdSe QRs in the zincblende pha
Externí odkaz:
http://arxiv.org/abs/1710.08640
Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 $\mu$m optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the effective bandgap
Externí odkaz:
http://arxiv.org/abs/1706.07007
Publikováno v:
In Optics Communications 15 September 2013 305:185-189
Publikováno v:
In Procedia Technology 2012 6:763-770
Publikováno v:
Journal of Applied Physics; 9/7/2016, Vol. 120 Issue 9, p1-8, 8p, 3 Charts, 6 Graphs
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 14, p143107-1-143107-11, 11p, 2 Diagrams, 1 Chart, 9 Graphs
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 14, p143103-1-143103-8, 8p, 2 Diagrams, 2 Charts, 5 Graphs