Výsledky vyhledávání - "Borzdov, Vladimir"

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Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration

Autor: Borzdov, Andrei, Pozdnyakov, Dmitry, Borzdov, Vladimir

Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of surface roughne

Externí odkaz: http://arxiv.org/abs/0806.3181

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Self-consistent calculations of phonon scattering rates in GaAs transistor structure with one-dimensional electron gas

Autor: Borzdov, Andrei, Pozdnyakov, Dmitry, Galenchik, Vadim, Borzdov, Vladimir, Komarov, Fadei

Publikováno v: Physica Status Solidi (b) 242 (15), R134-R136 (2005)

Self-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates was examined

Externí odkaz: http://arxiv.org/abs/cond-mat/0604200

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Ionized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels

Autor: Pozdnyakov, Dmitry, Galenchik, Vadim, Borzdov, Vladimir, Komarov, Fadei, Zhevnyak, Oleg

Publikováno v: Phys. Low-Dim. Struct. 1, 19-24 (2006)

An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the electrons in the

Externí odkaz: http://arxiv.org/abs/cond-mat/0604177

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Electron transport in armchair single-wall carbon nanotubes

Autor: Pozdnyakov, Dmitry, Galenchik, Vadim, Komarov, Fadei, Borzdov, Vladimir

Publikováno v: Physica E: Low-Dim. Syst. Nanostr. 33 (2), 336-342 (2006)

The rates of electron scattering via phonons in the armchair single-wall carbon nanotubes were calculated by using the improved scattering theory within the tight-binding approximation. Therefore, the problem connected with the discrepancy of the sca

Externí odkaz: http://arxiv.org/abs/cond-mat/0604121

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Akademický článek

Influence of scattering processes on electron quantum states in nanowires

Autor: Pozdnyakov Dmitry, Galenchik Vadim, Borzdov Andrei, Borzdov Vladimir, Komarov Fadei

Publikováno v: Nanoscale Research Letters, Vol 2, Iss 4, Pp 213-218 (2007)

AbstractIn the framework of quantum perturbation theory the self-consistent method of calculation of electron scattering rates in nanowires with the one-dimensional electron gas in the quantum limit is worked out. The developed method allows both the

Externí odkaz: https://doaj.org/article/0be5f4d4779a4ba4a8cac3b6409aa655