Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Borschak, V. A."'
Autor:
Borschak V. A.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 18-20 (2012)
There has been created a multipurpose program that allows to manage the image sensor scanning, to process data to compensate for the heterogeneity of the sensor photosensitivity and convert the video data file into any format, accessible to standard
Externí odkaz:
https://doaj.org/article/d2a88bd54dc540ceae508bc3c620363d
Publikováno v:
Sensor Electronics and Microsystem Technologies; Том 1, № 1 (2004); 41-44
Сенсорная электроника и микросистемные технологии; Том 1, № 1 (2004); 41-44
Сенсорна електроніка і мікросистемні технології; Том 1, № 1 (2004); 41-44
Сенсорная электроника и микросистемные технологии; Том 1, № 1 (2004); 41-44
Сенсорна електроніка і мікросистемні технології; Том 1, № 1 (2004); 41-44
In this article is discribed the results of the research of the processes of relaxation of a nonequilibrium charge in the barrier region of a nonideal heterojunction. A sensor based on this heterojunction, even at room temperature, can store a latent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::242d30405213051519f8be27cfeab999
http://semst.onu.edu.ua/article/view/111828
http://semst.onu.edu.ua/article/view/111828
Autor:
Borschak, V.1, Smyntyna, V.1, Brytavskyi, Ie.1 brytav@ukr.net, Karpenko, A.1, Zatovskaya, N.1
Publikováno v:
Semiconductors. Jun2013, Vol. 47 Issue 6, p838-843. 6p.
Publikováno v:
Semiconductors. Jul2011, Vol. 45 Issue 7, p894-899. 6p.
Publikováno v:
Photoelectronics; No. 25 (2016); 109-113
Photoelectronics; № 25 (2016); 109-113
Photoelectronics; № 25 (2016); 109-113
Abnormal dependence of volt-farad characteristics of «nonideal» heterojunctiоn barrier capacity is investigated. It is shown that in heterojunctions with the big concentration and non-uniform distribution of defects tunnel currents essentially inf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::563f91bbb86aedbd0efe96e7fa7da0c1
http://photoelectronics.onu.edu.ua/article/view/157643
http://photoelectronics.onu.edu.ua/article/view/157643
Publikováno v:
Photoelectronics; № 24 (2015); 72-76
A set of studies aimed at clarifying the deviation from the stoichiometry of CuxS compound during the formation and followed over time to establish the characteristics of changes in the chemical composition of the heterojunction components were carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::de298e230525759e6b376937e2dd0e4d
http://photoelectronics.onu.edu.ua/article/view/158110
http://photoelectronics.onu.edu.ua/article/view/158110
Publikováno v:
Photoelectronics; № 23 (2014); 152-155
The work is devoted to modeling and calculation of the spatial distribution of the concentration of charge localized in the space charge region (SCR) heterojunction, this distribution changes with time at different initial filling of deep traps cente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::69248ed91c6900e5ba52b09c729c3661
http://photoelectronics.onu.edu.ua/article/view/158783
http://photoelectronics.onu.edu.ua/article/view/158783
Autor:
Borschak, V. A.1, Brytavskyi, Ie. V.1 brytav@ukr.net, Smyntyna, V. A.1, Lepikh, Ya. I.1, Balaban, A. P.1, Zatovskaya, N. P.1
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012, Vol. 15 Issue 1, p41-43. 3p.
Publikováno v:
Nanomaterials for Security; 2016, p227-238, 12p
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