Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Borong Hu"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 737-753 (2024)
Compact and high current inductors determine the power density and efficiency of voltage regulators (VRs) for computing ICs. Conventional moulding structures using powder cores and gapped ferrite cores are reaching the limits of size miniaturization.
Externí odkaz:
https://doaj.org/article/c8744168a4c941f492ee8dedd43deebb
Autor:
Borong Hu, Sylvia Konaklieva, Shengyou Xu, Jose Ortiz-Gonzalez, Li Ran, Chong Ng, Paul McKeever, Olayiwola Alatise
Publikováno v:
The Journal of Engineering (2019)
Power semiconductor devices (chips) are usually arranged in parallel to increase the power rating of the modules for high power applications like renewable energy. In multi-device systems uneven degradation of the devices is inevitable. The uneven so
Externí odkaz:
https://doaj.org/article/d9fcc07002a34484819e61b0e7dd4025
Publikováno v:
IEEE Transactions on Power Electronics. 37:14067-14081
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Publikováno v:
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe).
Power semiconductor chips are parallelly packed in modules to achieve a specific current capacity and power level. An inhomogeneous degradation of the solder layer makes the junction temperature between chips unevenly distributed in multichip modules
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a850bd7a87954319352adebad3d85642
http://wrap.warwick.ac.uk/167354/1/WRAP-Junction-temperature-estimation-method-multichip-2022.pdf
http://wrap.warwick.ac.uk/167354/1/WRAP-Junction-temperature-estimation-method-multichip-2022.pdf
Autor:
Chunjiang Jia, Borong Hu, Huaping Jiang, Chong Ng, Peter Tavner, Paul McKeever, Philip Mawby, Li Ran, Chi Zhang, Zedong Hu
Publikováno v:
IEEE Transactions on Power Electronics. 36:7489-7500
Power semiconductor chips are paralleled in modules to increase current rating. Under thermo-mechanical stresses in service, the die-attach solder layers will gradually develop into different levels of degradation. Early fault detection requires to m
Solder degradation is still a main failure mechanism for power semiconductor modules. This study proposes a monitoring method to detect the relative change in heat dissipation from a module in two opposing directions, affected by the degradation: upw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34414df5f7cba7c1a23a9371b42c7e48
http://wrap.warwick.ac.uk/164081/1/WRAP-Monitoring-power-module-solder-degradation-heat-dissipation-two-opposite-directions-2022.pdf
http://wrap.warwick.ac.uk/164081/1/WRAP-Monitoring-power-module-solder-degradation-heat-dissipation-two-opposite-directions-2022.pdf
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:602-615
In renewable energy and grid applications, solder-attached power modules are subject to fatigue stress cycles of low amplitudes, but the devices will be in service for decades. This article aims to understand the slow aging process by focusing on the
Publikováno v:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC).