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Autor:
Zinovieva AF; Rzhanov Institute of Semiconductor Physics, SB RAS, 630090, Novosibirsk, Russia.; Novosibirsk State University, 630090, Novosibirsk, Russia., Zinovyev VA; Rzhanov Institute of Semiconductor Physics, SB RAS, 630090, Novosibirsk, Russia. zinoviev@isp.nsc.ru., Nenashev AV; Rzhanov Institute of Semiconductor Physics, SB RAS, 630090, Novosibirsk, Russia.; Novosibirsk State University, 630090, Novosibirsk, Russia., Teys SA; Rzhanov Institute of Semiconductor Physics, SB RAS, 630090, Novosibirsk, Russia., Dvurechenskii AV; Rzhanov Institute of Semiconductor Physics, SB RAS, 630090, Novosibirsk, Russia.; Novosibirsk State University, 630090, Novosibirsk, Russia., Borodavchenko OM; Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P. Brovki, 220072, Minsk, Belarus., Zhivulko VD; Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P. Brovki, 220072, Minsk, Belarus., Mudryi AV; Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P. Brovki, 220072, Minsk, Belarus.
Publikováno v:
Scientific reports [Sci Rep] 2020 Jun 09; Vol. 10 (1), pp. 9308. Date of Electronic Publication: 2020 Jun 09.