Výsledky vyhledávání - "Bornemann, Rainer"

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Chemical vapor deposited graphene: From synthesis to applications

Autor: Kataria, Satender, Wagner, Stefan, Ruhkopf, Jasper, Gahoi, Aamit, Pandey, Himadri, Bornemann, Rainer, Vaziri, Sam, Smith, Anderson D., Östling, Mikael, Lemme, Max C.

Publikováno v: physica status solidi (a), 211 (11), 2439-2449, 2014

Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developi

Externí odkaz: http://arxiv.org/abs/2103.14880

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High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes

Autor: Riazimehr, Sarah, Kataria, Satender, Bornemann, Rainer, Bolivar, Peter Haring, Ruiz, Francisco Javier Garcia, Engström, Olof, Godoy, Andres, Lemme, Max Christian

Publikováno v: ACS Photonics, 4(6): 1506-1514, 2017

Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/s

Externí odkaz: http://arxiv.org/abs/1702.01272

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Optimizing the Optical and Electrical Properties of Graphene Ink Thin Films by Laser-annealing

Autor: Del, Sepideh Khandan, Bornemann, Rainer, Bablich, Andreas, Schäfer-Eberwein, Heiko, Li, Jiantong, Kowald, Torsten, Östling, Mikael, Haring-Bolívar, Peter, Lemme, Max. C.

Publikováno v: 2D Materials, 2, 011003, 2015

We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop casting of high-

Externí odkaz: http://arxiv.org/abs/1501.03843

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