Zobrazeno 1 - 10
of 149
pro vyhledávání: '"Borisov, Pavel"'
Autor:
Akther, Amir, Pattnaik, Debi, Ushakov, Yury, Borisov, Pavel, Savel'ev, Sergey, Balanov, Alexander G.
Recently created diffusive memristors have garnered significant research interest owing to their distinctive capability to generate a diverse array of spike dynamics which are similar in nature to those found in biological cells. This gives the memri
Externí odkaz:
http://arxiv.org/abs/2407.18368
Autor:
Pattnaik, Debi Prasad, Siddique, Abu Bakar, Bregazzi, Alex T., Borisov, Pavel, Ray, Mallar, Savel'ev, Sergey, Banerjee, Niladri
Zero-dimensional graphene quantum dots (GQD) dispersed in conducting polymer matrix display a striking range of optical, mechanical, and thermoelectric properties which can be utilized to design next-generation sensors and low-cost thermoelectric. Th
Externí odkaz:
http://arxiv.org/abs/2312.16759
Autor:
Pattnaik, Debi, Sharma, Yash, Saveliev, Sergey, Borisov, Pavel, Akther, Amir, Balanov, Alexander, Ferreira, Pedro
Diffusive memristors owing to their ability to produce current spiking when a constant or slowly changing voltage is applied are competitive candidates for the development of artificial electronic neurons. These artificial neurons can be integrated i
Externí odkaz:
http://arxiv.org/abs/2306.12853
Autor:
Jang, Hoyoung, Ueda, Hiroki, Kim, Hyeong-Do, Kim, Minseok, Shin, Kwang Woo, Kim, Kee Hoon, Park, Sang-Youn, Shin, Hee Jun, Borisov, Pavel, Rosseinsky, Matthew J., Jang, Dogeun, Choi, Hyeongi, Eom, Intae, Staub, Urs, Chun, Sae Hwan
X-ray free electron lasers (XFEL) create femtosecond X-ray pulses with high brightness and high longitudinal coherence allowing to extend X-ray spectroscopy and scattering techniques into the ultrafast time-domain. These X-rays are a powerful probe f
Externí odkaz:
http://arxiv.org/abs/2110.15626
We report on the electrical properties of polycrystalline NbO2 thin film vertical devices grown on TiN coated SiO2/Si substrates using pulsed laser deposition. First, we analyzed the thickness and contact size dependences of threshold switching of Nb
Externí odkaz:
http://arxiv.org/abs/1805.02353
The orthorhombically distorted perovskite NaMnF$_{3}$ has been predicted to become ferroelectric if an $a=c$ distortion of the bulk $Pnma$ structure is imposed. In order to test this prediction, NaMnF$_{3}$ thin films were grown on SrTiO$_{3}$ (001)
Externí odkaz:
http://arxiv.org/abs/1611.00845
Autor:
Ushakov, Yury, Akther, Amir, Borisov, Pavel, Pattnaik, Debi, Savel’ev, Sergey, Balanov, Alexander G.
Publikováno v:
In Chaos, Solitons and Fractals: the interdisciplinary journal of Nonlinear Science, and Nonequilibrium and Complex Phenomena August 2021 149
Autor:
Wu, Stephen M., Zhang, Wei, KC, Amit, Borisov, Pavel, Pearson, John E., Jiang, J. Samuel, Lederman, David, Hoffmann, Axel, Bhattacharya, Anand
Publikováno v:
Phys. Rev. Lett. 116, 097204 (2016)
We report on the observation of the spin Seebeck effect in antiferromagnetic MnF$_2$. A device scale on-chip heater is deposited on a bilayer of Pt (4 nm)/MnF$_2$ (110) (30 nm) grown by molecular beam epitaxy on a MgF$_2$ (110) substrate. Using Pt as
Externí odkaz:
http://arxiv.org/abs/1509.00439
Preparation, characterization, and electrical properties of epitaxial NbO2 thin film lateral devices
Publikováno v:
J. Phys. D: Appl. Phys. 48, 335308 (2015)
Epitaxial NbO2 (110) films, 20 nm thick, were grown by pulsed laser deposition on Al2O3 (0001) substrates. The Ar/O2 total pressure during growth was varied to demonstrate the gradual transformation between NbO2 and Nb2O5 phases, which was verified u
Externí odkaz:
http://arxiv.org/abs/1506.06640